Characteristics of Be+ and O+ or H+ co‐implantation in GaAs/AlGaAs heterojunction bipolar transistor structures

The simultaneous formation of buried external collector and extrinsic base regions in GaAs/AlGaAs heterojunction bipolar transistor (HBT) structures by co‐implantation of Be+ together with O+ or H+ ions is described. Oxygen implants at doses of ≥ 1012 cm−2, or proton implants at doses ≥ 1014 cm−2, followed by annealing at 500–550 °C, create fully depleted collector regions, while similar anneals lead to significant Be activation and lowered base resistance. Higher annealing temperatures improve this Be activation but restore the initial doping level in the implanted collector region. For Be+ ion doses ≤ 5≤5× 1014 cm−2 there are no defects visible by transmission electron microscopy in the HBT structure for annealing temperatures below 800 °C.

[1]  B. Jalali,et al.  Near‐ideal lateral scaling in abrupt Al0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors prepared by molecular beam epitaxy , 1989 .

[2]  Y. Chen,et al.  Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHz , 1989, IEEE Electron Device Letters.

[3]  Y. Ota,et al.  Properties of molecular‐beam‐epitaxy‐grown and O+‐implanted GaAs and their application to the formation of a buried collector of an AlGaAs/GaAs heterojunction bipolar transistor , 1988 .

[4]  S. Adachi,et al.  Be+/P+ and Be+/As+ dual implantations into AlxGa1−xAs , 1988 .

[5]  S. Adachi.  Dual implantation of Be+ and F+ in GaAs and AlxGa1−xAs , 1987 .

[6]  K. Petermann,et al.  Linewidth enhancement for DFB lasers due to longitudinal field dependence in the laser cavity , 1987 .

[7]  K. Eda,et al.  Emitter—Base—Collector self-aligned heterojunction bipolar transistors using wet etching process , 1986, IEEE Electron Device Letters.

[8]  S. Adachi.  Be+/O+‐ion implantation in GaAs–AlGaAs heterojunctions , 1986 .

[9]  D.L. Miller,et al.  GaAs/(GaAl)As heterojunction bipolar transistors using a self-aligned substitutional emitter process , 1986, IEEE Electron Device Letters.

[10]  T. Ishibashi,et al.  Collector-up HBT's fabricated by Be+and O+ion implantations , 1986, IEEE Electron Device Letters.

[11]  O. Nakajima,et al.  Suppression of Emitter Size Effect on Current Gain in AlGaAs/GaAs HBTs , 1985 .

[12]  D. Sadana.  Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductors , 1985 .

[13]  D.L. Miller,et al.  GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers , 1984, IEEE Electron Device Letters.

[14]  H. Kroemer,et al.  Heterostructure bipolar transistors and integrated circuits , 1982, Proceedings of the IEEE.

[15]  B. J. Smith.  Ion implantation , 1977, Nature.