128Gb 3-Bit Per Cell NAND Flash Memory on 19nm Technology with 18MB/s Write Rate

A 128Gb 8-level NAND flash memory using 19nm CMOS technology has been developed. 128Gb is the largest single-chip capacity NAND memory. At 170mm 2 die size, this development achieves the highest Gb/mm2 in NAND flash memory. In addition to All Bit-Line (ABL) programming and sensing, Air Gap technology and a Toggle Mode 400Mbps I/O interface, along with improvements in sensing accuracy, enable this 3-bit per cell (X3) design to achieve a write throughput of 18MB/s using standard BCH ECC.

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