Photo-Induced Complex Permittivity Measurements Of Semiconductors At 9 Ghz

This paper describes a microwave method for determining the photo-induced incremental complex permittivity of semiconductor materials such as Si, Ge, Te, and-- also for the determination of the average collision time. An unbalanced bridge technique is used which allows sensitive measurements even at low optical illumination levels, with relatively simple computational procedures. This method is thus useful for evaluating the potential usefulness of semiconductors for optically controlled microwave devices.