Modulated Photoluminescence of Ge Quantum Dots Grown on SOI Substrate

Modulated photoluminescence(PL) of the Ge/Si quantum dots grown on SOI substrates is investigated.The PL spectrum presents multi-peak with different adjacent interval.With the increase of the wavelength,the interval increase.Simulation result indicates that the cavity formed by the mirrors at the surface and the buried SiO2 interface has a modulation effect on the luminescence.And the independence of the peak position on the exciting power also suggests this cavity effect.