论文信息 - Low‐temperature film growth of Si by reactive ion beam deposition

Low‐temperature film growth of Si by reactive ion beam deposition

A new low‐temperature film formation technique is proposed. It uses ionized species produced by an electron cyclotron resonance‐type microwave ion source with reactive gases and controlled in the low ion energy region, less than about 500 eV. Good quality homoepitaxial films on Si(111) are obtained at 600 °C and 100–500 eV ion energy by using SiH4 as a material gas. By increasing the ion energy to 250‐300 eV, homoepitaxial growth at 400 °C can be achieved. Polycrystalline Si films on the same type of substrates can also be obtained at 200 °C.

Y. Torii | H. Yamada

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