Data-Dependent Statistical Memory Model for Passive Array of Memristive Devices

A 2 × 2 equivalent statistical circuit model is presented to deal with sneak currents and random data distributions for n × m passive memory arrays of memristive devices. The data-dependent 2 × 2 circuit model enables a broad range of analysis, such as the optimum detection voltage margin, with computational efficiency and has no limit on the memory array size. In addition, we propose replica-based self-adaptable sense resistors to achieve both low-power reading and large voltage detection windowing.