fluctuations below the shot noise level via the fluctuating junction voltage, v(t). This voltage reflects the fluctuating charge carrier population number, n(t) = C . v(t)/e, where C represents the junction capacitance. In this "leaking reservoir" model, the noise reduction occurs over a 3 dB bandwidth, the "squeezing bandwidth", given byf1/(2= . Y . C), the same expression as for the modulation bandwidth, where Y . C = T, the carrier lifetime. It has been suggested5 that the negative feedback mechanism persists as the junction capacitance is reduced and operates to regulate single electron injection through the Coulomb blockade effect5 in mesoscopic junctions. The macroscopic Coulomb blockade model5 predicts that the squeezing bandwidth will be linearly proportional to current and inversely proportional to both temperature and depletion capacitance in the low injection current regime.
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