论文信息 - Growth of Zn1-xMnxTe films on GaAs(1 0 0) by hot-wall epitaxy

Growth of Zn1-xMnxTe films on GaAs(1 0 0) by hot-wall epitaxy

Abstract We have studied the growth of the Zn 1− x Mn x Te film on the GaAs(1 0 0) substrate by use of hot-wall epitaxy (HWE) system. The growth rate is rather slow and the epitaxial Zn 1− x Mn x Te films with thickness of about 230 nm are obtained after 6 h deposition. Mn composition can be easily controlled in the range of x =0–0.33 by changing the Mn source temperature (650–680 °C). It, however, is found that the structural quality of the films degrades with increasing Mn composition. Obtained Zn 1− x Mn x Te films showed photoluminescence originating in Mn 2+ ions.

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