Broad-Band Noise Mechanisms and Noise Measurements of Metal Semiconductor Junctions

Classic work on optimized heterodyne receivers has concentrated on the network aspects of mixers with limited emphasis on device properties. We present experimental results of GaAs Schottky-barrier diode noise measurements in the frequency range from 0.1 to 88 GHz and a detailed analysis of noise generation in these diodes which can explain the observed current and frequency dependence.

[1]  R. Mattauch,et al.  Unified theory of high‐frequency noise in Schottky barriers , 1973 .

[2]  R. E. Burgess,et al.  Electronic fluctuations in semiconductors , 1955 .

[3]  T. Maloney,et al.  Transient and steady‐state electron transport properties of GaAs and InP , 1977 .

[4]  Herbert Zirath,et al.  Noise Measurements and Noise Mechanisms in Microwave Mixer Diodes , 1984 .

[5]  E. Constant,et al.  Diffusion and the power spectral density and correlation function of velocity fluctuation for electrons in Si and GaAs by Monte Carlo methods , 1980 .

[6]  W. Baechtold,et al.  Noise behavior of GaAs field-effect transistors with short gate lengths , 1972 .

[7]  Herbert Zirath,et al.  Hot-electron noise generation in gallium-arsenide Schottky-barrier diodes , 1983 .

[8]  G. Hegazi,et al.  Limitations of Microwave and Millimeter-Wave Mixers Due to Excess Noise , 1985, 1985 IEEE MTT-S International Microwave Symposium Digest.

[9]  H. Zirath,et al.  Accurate Determination of the Series Resistance of mm-Wave Schottky-Diodes , 1985, 1985 15th European Microwave Conference.

[10]  Herbert Zirath,et al.  Characteristics of Schottky diodes with microcluster interface , 1983 .

[11]  A. Y. Cho,et al.  Low‐noise millimeter‐wave mixer diodes prepared by molecular beam epitaxy (MBE) , 1977 .

[12]  H. Zirath,et al.  Noise in Microwave and Millimeter-Wave Pt-GaAs Schottky Diodes , 1984, 1984 14th European Microwave Conference.

[13]  H. Zirath,et al.  Characteristics of Millimeter-Wave Schottky Diodes with Microcluster Interface , 1983, 1983 13th European Microwave Conference.

[14]  A. Y. Cho,et al.  Quasi‐Schottky barrier diode on n‐Ga0.47In0.53As using a fully depleted p+‐Ga0.47In0.53As layer grown by molecular beam epitaxy , 1982 .

[15]  D. N. Held,et al.  Conversion Loss and Noise of Microwave and Millimeterwave Mixers: Part 1--Theory , 1978 .

[16]  Herbert Zirath,et al.  Temperature-Variable Characteristics and Noise in Metal--Semiconductor Junctions , 1986 .

[17]  R. J. Mattauch,et al.  Local-oscillator-induced noise in GaAs Schottky mixer diodes , 1977 .

[18]  Chih-Tang Sah,et al.  Theory of low-frequency generation noise in junction-gate field-effect transistors , 1964 .

[19]  T. S. Hsu.  Low-frequency excess noise in metal—Silicon Schottky barrier diodes , 1970 .