High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

The continuous-wave operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature with a high output power of 50 mW, a high operating temperature of 100° C and a long lifetime of 300 hours. The characteristic temperature of the threshold current was as high as 170 K. The emission wavelength of the LDs was 416 nm.