Charge trapping in SiO 2 /HfO 2 gate dielectrics: comparison between charge-pumping and pulsed I D -V G

Charge-pumping (amplitude sweep) and the pulsed ID-VG technique have recently been introduced to study fast transient charging effects in alternative gate dielectrics. In this work, a detailed comparison between the two techniques is made using various experimental conditions. It is demonstrated that charge-pumping and pulsed ID-VG measurements yield equivalent results, when base level, charging times and device geometry are chosen carefully.

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