论文信息 - Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films

Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films

Highly conductive Al0.65Ga0.35N films were fabricated using indium–silicon codoping and a low growth temperature of 920 °C in the metalorganic chemical vapor deposition process. The Al0.65Ga0.35N:(Si,In) layers exhibited an n-type carrier density as high as 2.5×1019 cm−3 with an electron mobility of 22 cm2/V s, corresponding to a resistivity of 1.1×10−4 Ω cm. Significantly higher resistivity values were measured for AlxGa1−xN:Si doped films with x⩾0.49 deposited at 1150 °C without indium, e.g., the Al0.62Ga0.38N:Si samples exhibited a maximum carrier concentration of 1.3×1017 cm−3 and a resistivity of 6.2×10−2 Ω cm. The electrical properties of the films are discussed in relation to the chemical concentrations of silicon and residual impurities in the films.

S. Denbaars | S. Keller | U. Mishra | P. Cantu

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