Spintronic Nanoelectronics based on

This paper presents a novel design concept for spintronic nanoelectronics that emphasizes a seamless integration of spin-based memory and logic circuits. The building blocks are magneto-logic gates [1] based on a hybrid graphene/ferromagnet material system. We use network search engines as a technology demonstration vehicle and present a spin-based circuit design with smaller area, faster speed, and lower energy consumption than the stateof-the-art CMOS counterparts. This design can also be applied in applications such as data compression [2]‐[5], coding [6] and image recognition [7], [8]. In the proposed scheme, over 100 spin-based logic operations are carried out before any need for a spin-charge conversion. Consequently, supporting CMOS electronics requires little power consumption. The spintronic-CMOS integrated system can be implemented on a single 3-D chip. These nonvolatile logic circuits hold potential for a paradigm shift in computing applications.

[1]  H. Dery,et al.  Electric readout of magnetization dynamics in a ferromagnet-semiconductor system , 2006, cond-mat/0601642.

[2]  T. Nakamura,et al.  A high-speed and compact-size JPEG Huffman decoder using CAM , 1993, Symposium 1993 on VLSI Circuits.

[3]  D. Ralph,et al.  Spin transfer torques , 2007, 0711.4608.

[4]  Ralph,et al.  Current-driven magnetization reversal and spin-wave excitations in Co /Cu /Co pillars , 1999, Physical review letters.

[5]  Wei Han,et al.  Electron-hole asymmetry of spin injection and transport in single-layer graphene. , 2009, Physical review letters.

[6]  David J. Craft,et al.  A fast hardware data compression algorithm and some algorithmic extensions , 1998, IBM J. Res. Dev..

[7]  Yu Cao,et al.  New Generation of Predictive Technology Model for Sub-45 nm Early Design Exploration , 2006, IEEE Transactions on Electron Devices.

[8]  Yan Li,et al.  Electrical detection of spin precession in single layer graphene spin valves with transparent contacts , 2009 .

[9]  Berger.  Emission of spin waves by a magnetic multilayer traversed by a current. , 1996, Physical review. B, Condensed matter.

[10]  Jong-Seop Kim,et al.  A single chip Lempel-Ziv data compressor , 1993, 1993 IEEE International Symposium on Circuits and Systems.

[11]  M. Tinkham,et al.  Direct electronic measurement of the spin Hall effect , 2006, Nature.

[12]  L. J. Sham,et al.  Spin-based logic in semiconductors for reconfigurable large-scale circuits , 2007, Nature.

[13]  D. Nikonov,et al.  Strategies and tolerances of spin transfer torque switching , 2010, 1001.4578.

[14]  Azad Naeemi,et al.  Interconnects for Novel State Variables: Performance Modeling and Device and Circuit Implications , 2010, IEEE Transactions on Electron Devices.

[15]  I. N. Krivorotov,et al.  Spin-transfer effects in nanoscale magnetic tunnel junctions , 2004, cond-mat/0404002.

[16]  Y. Huai,et al.  Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions , 2004, cond-mat/0504486.

[17]  S. Sarma,et al.  Spintronics: Fundamentals and applications , 2004, cond-mat/0405528.

[18]  Hanan Dery,et al.  Spin transference and magnetoresistance amplification in a transistor , 2006 .

[19]  A. Kent,et al.  Spin-transfer-induced precessional magnetization reversal , 2004 .

[20]  Hitoshi Kubota,et al.  High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs , 2010 .

[21]  H. Ohno,et al.  Magnetic Tunnel Junctions for Spintronic Memories and Beyond , 2007, IEEE Transactions on Electron Devices.

[22]  Wei Han,et al.  Tunneling spin injection into single layer graphene. , 2010, Physical review letters.

[23]  Jhing-Fa Wang,et al.  Cam-Based VLSI Architectures for Dynamic Huffman Coding , 1994, IEEE International Conference on Consumer Electronics.

[24]  Chen-Yi Lee,et al.  High-throughput data compressor designs using content addressable memory , 1994, Proceedings of IEEE International Symposium on Circuits and Systems - ISCAS '94.

[25]  H. Dery,et al.  Lateral diffusive spin transport in layered structures , 2005, cond-mat/0510770.

[26]  H. Meng,et al.  Spin transfer in nanomagnetic devices with perpendicular anisotropy , 2006 .

[27]  E. Delenia,et al.  A Three-Terminal Approach to Developing Spin-Torque Written Magnetic Random Access Memory Cells , 2009, IEEE Transactions on Nanotechnology.

[28]  Mamoru Nakanishi,et al.  On using the CAM concept for parametric curve extraction , 2000, IEEE Trans. Image Process..

[29]  J. Slonczewski.  Current-driven excitation of magnetic multilayers , 1996 .

[30]  B. Wees,et al.  Electronic spin transport and spin precession in single graphene layers at room temperature , 2007, Nature.

[31]  E. Joseph,et al.  A three-terminal spin-torque-driven magnetic switch , 2009 .