Advanced 45nm MOSFET small-signal equivalent circuit aging under DC and RF hot carrier stress

The continuous CMOS performance improvement enhances the interest of the RF CMOS for millimeter wave application. Hence the extension of DC reliability model in the RF domain is becoming critical. Understanding the MOSFET aging influence on the small signal equivalent circuit is a key concern to integrate the RF reliability simulation at compact model level. In this work, an accurate setup which allows the application of RF stress and the monitoring of DC/RF parameters is detailed. Hot carrier stress is performed on MOSFET and a physical analysis of the small signal equivalent circuit aging is done.

[1]  Chong-Gun Yu,et al.  RF performance degradation in nMOS transistors due to hot carrier effects , 2000 .

[2]  Ying-Zong Juang,et al.  DC and RF Degradation Induced by High RF Power Stresses in 0.18- $\mu\hbox{m}$ nMOSFETs , 2010, IEEE Transactions on Device and Materials Reliability.

[3]  T. Vanhoucke,et al.  RF reliability of short channel NMOS devices , 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.

[4]  J.A.M. Geelen,et al.  An improved de-embedding technique for on-wafer high-frequency characterization , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

[5]  F. Kuper,et al.  MOSFET Degradation Under RF Stress , 2008, IEEE Transactions on Electron Devices.

[6]  J.S. Yuan,et al.  MOS RF reliability subject to dynamic voltage stress-modeling and analysis , 2005, IEEE Transactions on Electron Devices.

[7]  G. Ghibaudo,et al.  Hot carrier impact on the small signal equivalent circuit , 2010, 2010 IEEE International Integrated Reliability Workshop Final Report.

[8]  N. Camilleri,et al.  Extracting small-signal model parameters of silicon MOSFET transistors , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[9]  M. Rafik,et al.  Multiple microscopic defects characterization methods to improve macroscopic degradation modeling of MOSFETs , 2010, 2010 IEEE International Integrated Reliability Workshop Final Report.