Multi-beam Inspection (MBI) development progress and applications

In order to successfully develop and manufacture semiconductor chips, in-line inspection is extremely important. Optical and e-beam inspection are the two major defect inspection approaches used for semiconductor manufacturing. As critical dimensions continue to shrink with each new technology, killer defects are becoming smaller and smaller, reducing the effectiveness of optical inspection, which is resolution limited. A growing number of defect types are just not detectable with optical inspection. A partial solution is to adjust inspection parameters to run “hot”, but then the few defects of interest that are captured are buried in large numbers of nuisance defects. E-beam inspection (EBI), in addition to it’s unique role of detecting buried defects using voltage contrast (VC), is able to detect these smaller defects, but suffers from throughput constraints. This is because of EBI’s substantially smaller pixel size, which takes much longer to tile across the wafer surface, and a lower sampling frequency, because electrons aren’t as prevalent as photons. In R&D, this is not as much of a limitation, with EBI commonly deployed as a metric for many physical defects beyond optical inspection resolution as well as lithography related use cases such as process window qualification (PWQ) and EUV print check. However, EBI’s adoption during yield ramp and high volume manufacturing (HVM) is limited by these throughput constraints. To address this issue, HMI is developing multi-beam inspection (MBI) systems [1,2]. This latest paper covers three new topics. First, new milestones were achieved in the last year, including simultaneous operation of all beams and defect detection while in this mode, will be reviewed. Second, the importance of minimizing cross-talk between beamlets for MBI and the cross-talk performance of our latest tool is discussed. Finally, simulations of the anticipated throughput gains achievable for a range of physical and voltage contrast inspections for the current system are presented. These throughput gains vary widely and are useful in prioritizing certain inspections over others for practical use, as well as understanding the limiting factors for laggard inspections. Potentially some of these factors can be alleviated. Going forward, the plan is to continue to aggressively increase the number of beamlets while simultaneously further improving the resolution. Overall the HMI MBI program is on track with tool shipments to select customers in the very near future.

[1]  O.D. Patterson,et al.  Voltage Contrast Inspection Methodology for Inline Detection of Missing Spacer and Other Nonvisual Defects , 2008, IEEE Transactions on Semiconductor Manufacturing.

[2]  Jack Jau,et al.  Leakage monitoring and control with an advanced e-beam inspection system , 2006, SPIE Advanced Lithography.

[3]  Fei Wang,et al.  E-beam inspection for gap physical defect detection in 28nm CMOS process , 2013, ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference.

[4]  Zhiyong Ma,et al.  Metrology and Diagnostic Techniques for Nanoelectronics , 2016 .

[5]  Oliver D. Patterson,et al.  In-line characterization of EDRAM for a FINFET technology using VC inspection , 2016, 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

[6]  Timothy F. Crimmins Defect metrology challenges at the 11-nm node and beyond , 2010, Advanced Lithography.

[7]  Oliver D. Patterson,et al.  A multi-factorial approach for middle-of-line design rule validation and optimization in 22FDX® , 2018, 2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

[8]  Oliver D. Patterson,et al.  BOX breakdown: A novel defect mode in a 14nm SOI FinFET technology , 2018, 2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

[9]  Yasutaka Morikawa,et al.  Study of program defects of 22nm nanoimprint template with an advanced e-beam inspection system , 2009, Photomask Technology.

[10]  Tadahiko Takikawa,et al.  Native pattern defect inspection of EUV mask using advanced electron beam inspection system , 2010, Photomask Technology.

[11]  Fei Wang,et al.  Cutting edge multiple beam technology for EUV era: latest development progress and application , 2018, Advanced Lithography.

[12]  Hong Xiao,et al.  Post-WCMP leakage detection and monitoring on 65-nm devices using an advanced e-beam inspection system , 2005, ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005..

[13]  Yan Zhao,et al.  Study of devices leakage of 45nm node with different SRAM layouts using an advanced e-beam inspection systems , 2009, Advanced Lithography.