Over 10 a operation with switching characteristics of 1.2 kV-class vertical GaN trench MOSFETs on a bulk GaN substrate

In this paper, we demonstrate 1.2 kV-class vertical GaN trench MOSFETs fabricated on a bulk GaN substrate with high current and switching operations. The fabricated multi-cell MOSFET achieved a blocking voltage of 1.3 kV by using a field-plate edge termination around an isolation mesa. The MOSFET chip with the size of 1.5 mm × 1.5 mm operates at current rating of as high as 23.2 A with fast switching characteristics. To our knowledge, this is the first report for vertical GaN-based transistors with a high current operation exceeding 10 A and dynamic characteristics.

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