The effect of Mn content on magnetism and half-metallicity of off-stoichiometric Co 2 MnAl

[1]  Hong Chen,et al.  The effect of disorder on electronic and magnetic properties of quaternary Heusler alloy CoFeMnSi with LiMgPbSb-type structure , 2015 .

[2]  K. Seema,et al.  Electronic structure and magnetic properties of quaternary Heusler alloy Co2CrGa1−xGex (x=0−1) , 2015 .

[3]  A. Gloskovskii,et al.  Direct observation of half-metallicity in the Heusler compound Co2MnSi , 2014, Nature Communications.

[4]  G. Fecher,et al.  Probing the electronic states of high-TMR off-stoichiometric Co2MnSi thin films by hard x-ray photoelectron spectroscopy , 2014 .

[5]  S. Blügel,et al.  Conditions for spin-gapless semiconducting behavior in Mn2CoAl inverse Heusler compound , 2014 .

[6]  Hong Chen,et al.  Half-metallicity and magnetism of the quaternary inverse full-Heusler alloy Ti2-xMxCoAl (M = Nb, V) from the first-principles calculations , 2014, The European Physical Journal B.

[7]  Changchun Wei,et al.  Half-metallicity and anisotropic magnetoresistance of epitaxial Co2FeSi Heusler films , 2013 .

[8]  G. Fecher,et al.  Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl. , 2012, Physical review letters.

[9]  M. Cinchetti,et al.  Structural, chemical, and electronic properties of the Co 2 MnSi(001)/MgO interface , 2012, 1209.5436.

[10]  T. Miyazaki,et al.  Magnetic Properties of Single Crystalline Co2MnAl Heusler Alloy Thin Films , 2011, Journal of Superconductivity and Novel Magnetism.

[11]  M. Shirai,et al.  Effects of interfacial noncollinear magnetic structures on spin-dependent conductance in Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions: A first-principles study , 2011 .

[12]  Claudia Felser,et al.  Efficient spin injector scheme based on Heusler materials. , 2011, Physical review letters.

[13]  K. Matsuda,et al.  Influence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions , 2009 .

[14]  M. Scheffler,et al.  Structural stability and magnetic and electronic properties of Co2MnSi(001)/MgO heterostructures: a density-functional theory study. , 2009, Physical review letters.

[15]  Yasuo Ando,et al.  Large tunnel magnetoresistance in magnetic tunnel junctions using a Co2MnSi Heusler alloy electrode and a MgO barrier , 2008 .

[16]  E. Tsymbal,et al.  Interface effects in spin-polarized metal/insulator layered structures , 2008 .

[17]  I. Turek,et al.  Electronic, magnetic, and transport properties and magnetic phase transition in quaternary (Cu,Ni)MnSb Heusler alloys , 2008 .

[18]  Xiaolin Wang,et al.  Proposal for a new class of materials: spin gapless semiconductors. , 2008, Physical review letters.

[19]  K. Ishida,et al.  Magnetic properties and stability of L21 and B2 phases in the Co2MnAl Heusler alloy , 2008 .

[20]  Takayuki Ishikawa,et al.  Fabrication of fully epitaxial Co2MnSi∕MgO∕Co2MnSi magnetic tunnel junctions , 2008 .

[21]  Jinjun Qiu,et al.  Structural and magnetoresistive properties of magnetic tunnel junctions with half-metallic Co2MnAl , 2008 .

[22]  J. L. Chen,et al.  Mn2CoZ (Z=Al,Ga,In,Si,Ge,Sn,Sb) compounds : Structural, electronic, and magnetic properties , 2008 .

[23]  H. Akbarzadeh,et al.  First principle study of Co2MnSi/GaAs(001) heterostructures , 2007 .

[24]  G. Fecher,et al.  Understanding the trend in the Curie temperatures of Co2-based Heusler compounds: Ab initio calculations , 2007 .

[25]  Yoshio Miura,et al.  Half-metallicity at the (110) interface between a full Heusler alloy and GaAs , 2006 .

[26]  A. Petford-Long,et al.  Interface effects in highly oriented films of the Heusler alloy Co2MnSi on GaAs(001) , 2006 .

[27]  H. Kubota,et al.  Magnetic tunnel junctions using B2-ordered Co2MnAl Heusler alloy epitaxial electrode , 2006 .

[28]  G. Fecher,et al.  Investigation of Co2FeSi: The Heusler compound with highest Curie temperature and magnetic moment , 2005, cond-mat/0511462.

[29]  A. Sakuma,et al.  Magnetic properties and band structures of half-metal-type Co2CrGa Heusler alloy , 2004 .

[30]  H. Kubota,et al.  Large Magnetoresistance in Magnetic Tunnel Junctions Using Co-Mn-Al Full Heusler Alloy , 2004 .

[31]  S. Sarma,et al.  Spintronics: Fundamentals and applications , 2004, cond-mat/0405528.

[32]  C. Walle,et al.  First-principles calculations for defects and impurities: Applications to III-nitrides , 2004 .

[33]  A. Freeman,et al.  Role of structural defects on the half-metallic character of Co 2 MnGe and Co 2 MnSi Heusler alloys , 2004 .

[34]  H. Ebert,et al.  Effect of the spin-orbit interaction on the band gap of half metals , 2003, cond-mat/0308146.

[35]  H. Adachi,et al.  Fabrication and Magnetoresistance Properties of Spin-Dependent Tunnel Junctions Using an Epitaxial Fe3O4 Film , 2002 .

[36]  Stuart A. Wolf,et al.  Spintronics: A Spin-Based Electronics Vision for the Future , 2001, Science.

[37]  K. Ploog,et al.  Room-temperature spin injection from Fe into GaAs. , 2001, Physical review letters.

[38]  G. Xiao,et al.  Inverse magnetoresistance in chromium-dioxide-based magnetic tunnel junctions , 2001 .

[39]  J. Moodera,et al.  Spin-polarized tunneling in a half-metallic ferromagnet , 1999 .

[40]  K.H.J. Buschow,et al.  New Class of Materials: Half-Metallic Ferromagnets , 1983 .

[41]  M. Julliere.  Tunneling between ferromagnetic films , 1975 .