论文信息 - Low-temperature layer splitting of (100) GaAs by He+H coimplantation and direct wafer bonding

Low-temperature layer splitting of (100) GaAs by He+H coimplantation and direct wafer bonding

The present letter introduces a low-temperature GaAs layer splitting approach by He+H coimplantation which—in combination with direct wafer bonding—enables monolithic integration of GaAs with different substrates. The influence of He+H coimplantation on blistering and layer splitting of GaAs is studied and the optimum coimplantation conditions are determined. Thin GaAs layers are transferred onto Si after bonding of He+H coimplanted GaAs and Si substrates via a spin-on glass intermediate layer and subsequent annealing at only 225 °C for 14 h. Cross-sectional transmission electron microscopy investigations show a high quality of the GaAs/SOG bonding interface.

[1] GaAs on Si: towards a low-temperature “smart-cut” technology , 2003 .

[2] M. Reiche,et al. Low temperature GaAs/Si direct wafer bonding , 2000 .

[3] Steven A. Ringel,et al. Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates , 2000 .

[4] Q.-Y. Tong,et al. Wafer Bonding and Layer Splitting for Microsystems , 1999 .

[5] T. E. Haynes,et al. Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation , 1998 .

[6] O. W. Holland,et al. Efficient production of silicon-on-insulator films by co-implantation of He+ with H+ , 1998 .

[7] Bernard Aspar,et al. Transfer of 3 in GaAs film on silicon substrate by proton implantation process , 1998 .

[8] D. Biegelsen,et al. Use of ZnSe as an interlayer for GaAs growth on Si , 1992 .