Distributed feedback strained layer quantum well heterostructure 980 nm laser fabricated by two-step metalorganic chemical vapor deposition

Data are presented for single longitudinal mode, strained‐layer AlGaAs‐GaAs‐InGaAs quantum well heterostructure distributed feedback lasers emitting near 980 nm. Device fabrication consists of conventional holographic photolithography and two‐step metalorganic chemical vapor deposition growth. Regrowth over a GaAs grating layer and GaAs solid phase mass transport are discussed. The lasers are single mode up to twice Ith, have differential quantum efficiencies of 50%, and have threshold current densities of 600 A/cm2.

[1]  Ming C. Wu,et al.  Linewidth broadening due to longitudinal spatial hole burning in a long distributed feedback laser , 1988 .

[2]  Y. Ohkura,et al.  1.3- mu m distributed feedback laser diode with a grating accurately controlled by a new fabrication technique , 1989 .

[3]  Y. Miyamoto,et al.  Buried rectangular GaInAs/InP corrugations of 70 nm pitch fabricated by OMVPE , 1990 .

[4]  N. Carlson,et al.  Demonstration of InGaAs/AlGaAs strained-layer distributed-feedback grating-surface-emitting lasers with a buried second-order grating structure , 1991 .

[5]  H. Hillmer,et al.  Design and realization of InGaAs/GaAs strained layer DFB quantum well lasers , 1992 .

[6]  K. Iga.  On the Use of Effective Refractive Index in DFB Laser Mode Separation , 1983 .

[7]  M. Tacke,et al.  The complex propagation constant of multilayer waveguides: an algorithm for a personal computer , 1990 .

[8]  L. M. Miller,et al.  Characterization of an InGaAs-GaAs-AlGaAs strained-layer distributed-feedback ridge-waveguide quantum-well heterostructure laser , 1992, IEEE Photonics Technology Letters.

[9]  L. M. Miller,et al.  A distributed feedback ridge waveguide quantum well heterostructure laser , 1991, IEEE Photonics Technology Letters.

[10]  S. G. Napholtz,et al.  Dynamic and CW linewidth measurements of 1.55- mu m InGaAs-InGaAsP multiquantum well distributed feedback lasers , 1990, IEEE Photonics Technology Letters.

[11]  Y. Mori,et al.  AlGaAs/GaAs distributed feedback laser diodes grown by MOCVD , 1986 .