We propose a novel terahertz metamaterial structure based on patterned monolayer graphene. This structure produces an evident dual plasmon-induced transparency (PIT) phenomenon due to destructive interference between bright and dark modes. Since the Fermi level of graphene can be adjusted by an external bias voltage, the PIT phenomenon can be tuned by adjusting the voltage. Then the coupled-mode theory (CMT) is introduced to explore the internal mechanism of the PIT. After that, we investigate the variation of absorption rate at different graphene carrier mobilities, and it shows that the absorption rate of this structure can reach 50%, which is a guideline for the realization of graphene terahertz absorption devices. In addition, through the study of the slow-light performance for this structure, it is found that its group index is as high as 928, which provides a specific theoretical basis for the study of graphene slow-light devices.