论文信息 - 90-nm-gated AlGaN/GaN HEMT with fT&fmax of 132GHz&205GHz

90-nm-gated AlGaN/GaN HEMT with fT&fmax of 132GHz&205GHz

AlGaN/GaN high electron mobility transistors (HEMTs) with about 90 nm gate and 18nm-thick AlGaN barrier were fabricated on SiC substrate. The DC and RF characteristics were measured. The device has achieved a maximum drain current density of 1.2A/mm at a gate bias of +1.0V and a peak extrinsic transconductance of about 300mS/mm. The current-gain cutoff frequency (fT) reached 132GHz, resulting in a fT×Lg of 11.9GHz·um. The maximum oscillation frequency (fmax) reached 205GHz.

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