We have developed a new technique of single-wafer spin cleaning at room temperature, while alternately supplying ozonized water and dilute HF for only 10 s each onto a rotating silicon wafer through jet nozzles, then repeating the cycle until the surface cleanliness reaches the required level. The new spin cleaning sequence can efficiently remove both particulate and metallic contaminants as well as organic contaminants on the surface of silicon wafers in a short time without increasing the microroughness of the surface. This technique will meet the requirements for stricter wafer cleanliness, larger diameter wafer processing, and greater respect for the environment.