Ultra-flexible, layout-enabled field plates for HV transistor integration in SOI-based CMOS
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[1] T. Uesugi,et al. A concept of SOI RESURF lateral devices with striped trench electrodes , 2005, IEEE Transactions on Electron Devices.
[2] S. Merchant,et al. Analytical model for the electric field distribution in SOI RESURF and TMBS structures , 1999 .
[3] C. Contiero,et al. Progress in power ICs and MEMS, "analog" technologies to interface the real world , 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.
[4] M. Swanenberg,et al. Advanced 100V, 0.13 gm BCD process for next generation automotive applications , 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.