Recent advances in avalanche photodiodes
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[1] M. Deen,et al. Multiplication in separate absorption, grading, charge, and multiplication InP-InGaAs avalanche photodiodes , 1995 .
[2] R. C. Tozer,et al. Avalanche Multiplication and Breakdown in Al Ga As , 2002 .
[3] S. D. Personick,et al. Receiver design for optical fiber communication systems , 1980 .
[4] Yuichi Matsushima,et al. High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers , 1982 .
[5] E. Ishimura,et al. Investigation of guardring-free planar AlInAs avalanche photodiodes , 2006, IEEE Photonics Technology Letters.
[6] Sethumadhavan Chandrasekhar,et al. Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes , 1989 .
[7] R. C. Tozer,et al. Nonlocal effects in thin 4H-SiC UV avalanche photodiodes , 2003 .
[8] Arden Sher,et al. CPA band calculation for (Hg, Cd) Te , 1982 .
[9] Craig Armiento,et al. Impact ionization in (100), (110), and (111) oriented InP avalanche photodiodes , 1983 .
[10] J. Conradi,et al. The distribution of gains in uniformly multiplying avalanche photodiodes: Experimental , 1972 .
[11] John E. Bowers,et al. High gain-bandwidth-product silicon heterointerface photodetector , 1997 .
[12] A. Holmes,et al. A study of low-bias photocurrent gradient of avalanche photodiodes , 2002 .
[13] Joe C. Campbell,et al. Multiplication noise of AlxGa1−xAs avalanche photodiodes with high Al concentration and thin multiplication region , 2001 .
[14] Factors affecting the ultimate capabilities of high speed avalanche photodiodes and a review of the state-of-the-art , 1973 .
[15] N. B. Chakraborti,et al. Multiplication noise in multi-heterostructure avalanche photodiodes , 1983 .
[16] Joe C. Campbell,et al. Improved solar-blind detectivity using an AlxGa1−xN heterojunction p–i–n photodiode , 2002 .
[17] Majeed M. Hayat,et al. Optimal excess noise reduction in thin heterojunction Al0.6Ga0.4As-GaAs avalanche photodiodes , 2001 .
[18] M. Hopkinson,et al. The effect of dead space on gain and excess noise in In0.48Ga0.52P p+in+ diodes , 2003 .
[19] X. Li,et al. Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region , 2001, IEEE Photonics Technology Letters.
[20] R. Mcintyre. Multiplication noise in uniform avalanche diodes , 1966 .
[21] Bo Yang,et al. Low dark current 4H-SiC avalanche photodiodes , 2003 .
[22] R. Sidhu,et al. 2.4 lm cutoff wavelength avalanche photodiode on InP substrate , 2000 .
[23] Bahaa E. A. Saleh,et al. Effect of dead space on gain and noise double-carrier-multiplication avalanche photodiodes , 1992, Optical Society of America Annual Meeting.
[24] J. David,et al. Fokker–Planck model for nonlocal impact ionization in semiconductors , 2001 .
[25] R. B. Emmons,et al. Avalanche photodiode frequency response , 1967 .
[26] W. N. Grant. Electron and hole ionization rates in epitaxial silicon at high electric fields , 1973 .
[27] A. J. Moseley,et al. Measurement of absorption coefficients of Ga 0.47 In 0.53 As over the wavelength range 1.0-1.7 μm , 1985 .
[28] Joe C. Campbell,et al. Ultra-low noise avalanche photodiodes with a "centered-well" multiplication region , 2003 .
[29] Gregory H. Olsen,et al. 4H-SiC visible blind UV avalanche photodiode , 1999 .
[30] R. J. McIntyre,et al. A new look at impact ionization-Part I: A theory of gain, noise, breakdown probability, and frequency response , 1999 .
[31] Chee Hing Tan,et al. Avalanche multiplication and noise in submicron Si p-i-n diodes , 2000, Photonics West - Optoelectronic Materials and Devices.
[32] A. Holmes,et al. InGaAs/InAlAs avalanche photodiode with undepleted absorber , 2003 .
[33] J.C. Campbell,et al. Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz , 1999, IEEE Photonics Technology Letters.
[34] J. Campbell,et al. Calculation of gain and noise with dead space for GaAs and Al/sub x/Ga/sub 1-x/As avalanche photodiode , 2002 .
[35] Bahaa E. A. Saleh,et al. Boundary effects on multiplication noise in thin heterostructure avalanche photodiodes: theory and experiment [Al/sub 0.6/Ga/sub 0.4/As/GaAs] , 2002 .
[36] J. C. Dries,et al. Strain compensated In1−xGaxAs(x<0.47) quantum well photodiodes for extended wavelength operation , 1998 .
[37] John P. R. David,et al. Investigation of impact ionization in thin GaAs diodes , 1996 .
[38] C. R. Crowell,et al. Threshold Energies for Electron-Hole Pair Production by Impact Ionization in Semiconductors , 1972 .
[39] Joe C. Campbell,et al. Backside illuminated high saturation current partially depleted absorber photodetectors , 2003 .
[40] J.P.R. David,et al. Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes , 2002, IEEE Photonics Technology Letters.
[41] J.C. Campbell,et al. Avalanche photodiodes with an impact-ionization-engineered multiplication region , 2000, IEEE Photonics Technology Letters.
[42] R. Mcintyre. The distribution of gains in uniformly multiplying avalanche photodiodes: Theory , 1972 .
[43] William D. Goodhue,et al. GaN avalanche photodiodes grown by hydride vapor-phase epitaxy , 1999 .
[44] H. W. Ruegg,et al. An optimized avalanche photodiode , 1967 .
[45] C. Hu,et al. A new look at impact ionization-Part II: Gain and noise in short avalanche photodiodes , 1999 .
[46] B. Kasper,et al. High-performance avalanche photodiode with separate absorption ‘grading’ and multiplication regions , 1983 .
[47] Q. Wahab,et al. Ionization rates and critical fields in 4H silicon carbide , 1997 .
[48] Raymond Y. Chiao,et al. Fast Light, Slow Light , 2002 .
[49] Mark A. Itzler,et al. Planar bulk InP avalanche photodiode design for 2.5 and 10 Gb/s applications , 1998, 24th European Conference on Optical Communication. ECOC '98 (IEEE Cat. No.98TH8398).
[50] Joe C. Campbell,et al. GaN avalanche photodiodes , 2000 .
[51] S. Forrest,et al. A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode , 2002, IEEE Photonics Technology Letters.
[52] J.C. Campbell,et al. Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates , 2002, IEEE Photonics Technology Letters.
[53] Takao Kaneda,et al. A model for reach‐through avalanche photodiodes (RAPD’s) , 1976 .
[54] G. E. Stillman,et al. Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements , 1982 .
[55] Chee Hing Tan,et al. Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes , 2001 .
[56] J. C. Brice,et al. Properties of mercury cadmium telluride , 1987 .
[57] R. A. Logan,et al. Ionization Rates of Holes and Electrons in Silicon , 1964 .
[58] Ryoji Takeyari,et al. High-sensitivity and wide-dynamic-range 10 Gbit/s APD/preamplifier optical receiver module , 2002 .
[59] J. C. Dries,et al. Optimization of 10-Gb/s long-wavelength floating guard ring InGaAs-InP avalanche photodiodes , 2002, IEEE Photonics Technology Letters.
[60] R. C. Tozer,et al. Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9) , 2002 .
[61] J.C. Campbell,et al. High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region , 2005, IEEE Photonics Technology Letters.
[62] Federico Capasso,et al. Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio , 1982 .
[63] J.C. Campbell,et al. Low dark current GaN avalanche photodiodes , 2000, IEEE Journal of Quantum Electronics.
[64] Toshitaka Torikai,et al. High-speed and high-sensitivity waveguide InAlAs avalanche photodiodes for 10-40 Gb/s receivers , 2001, LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242).
[65] J.C. Campbell,et al. Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses , 2000, IEEE Journal of Quantum Electronics.
[66] R. C. Tozer,et al. Low avalanche noise characteristics in thin InP p/sup +/-i-n/sup +/ diodes with electron initiated multiplication , 1999, IEEE Photonics Technology Letters.
[67] Karl Hess,et al. Impact ionisation in multilayered heterojunction structures , 1980 .
[68] A. Lacaita,et al. Mean gain of avalanche photodiodes in a dead space model , 1996 .
[69] Morio Wada,et al. Wide wavelength and low dark current lattice‐mismatched InGaAs/InAsP photodiodes grown by metalorganic vapor‐phase epitaxy , 1994 .
[70] J. Campbell,et al. Calculation of Gain and Noise With Dead Space for GaAs and Al Ga As Avalanche Photodiode , 2002 .
[71] N. Tscherptner,et al. High-responsivity and high-speed evanescently-coupled avalanche photodiodes , 2003 .
[72] L. Tarof. Planar InP-InGaAs avalanche photodetectors with n-multiplication layer exhibiting a very high gain-bandwidth product , 1990, IEEE Photonics Technology Letters.
[73] Joe C. Campbell,et al. Noise characteristics of thin multiplication region GaAs avalanche photodiodes , 1996 .
[74] M. Kinch,et al. The HgCdTe electron avalanche photodiode , 2006, 2006 Digest of the LEOS Summer Topical Meetings.
[75] J. P. Praseuth,et al. Waveguide AlInAs/GaAlInAs avalanche photodiode with a gain-bandwidth product over 160 GHz , 1997 .
[76] John P. R. David,et al. Avalanche multiplication noise characteristics in thin GaAs p/sup +/-i-n/sup +/ diodes , 1998 .
[77] J. David,et al. Impact ionization in thin AlxGa1−xAs (x=0.15 and 0.30) p-i-n diodes , 1997 .
[78] M. Teich,et al. Impact-ionization and noise characteristics of thin III-V avalanche photodiodes , 2001 .
[79] Stephen R. Forrest,et al. Evidence for tunneling in reverse‐biased III‐V photodetector diodes , 1980 .
[80] F. Capasso,et al. Low-dark-current low-voltage 1.3–1.6 μm avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions by molecular beam epitaxy , 1984 .
[81] Joe C. Campbell,et al. Thin multiplication region InAlAs homojunction avalanche photodiodes , 1998 .
[82] J. David,et al. A Monte Carlo investigation of multiplication noise in thin p/sup +/-i-n/sup +/ GaAs avalanche photodiodes , 1998 .
[83] L. Faraone,et al. Adaptive focal plane array (AFPA) technologies for integrated infrared microsystems , 2006, SPIE Defense + Commercial Sensing.
[84] R. C. Tozer,et al. Excess Noise Characteristics of Al Ga As Avalanche Photodiodes , 2002 .
[85] Joe C. Campbell,et al. Multigigabit-per-second avalanche photodiode lightwave receivers , 1987 .
[86] R. M. Ash,et al. Buried-mesa avalanche photodiodes , 1998 .
[87] J.C. Campbell,et al. Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz , 2001, IEEE Photonics Technology Letters.
[88] S. Demiguel,et al. Very high-responsivity evanescently coupled photodiodes integrating a short planar multimode waveguide for high-speed applications , 2003, IEEE Photonics Technology Letters.
[89] P. Mages,et al. Fused InGaAs-Si avalanche photodiodes with low-noise performances , 2002, IEEE Photonics Technology Letters.
[90] Jian H. Zhao,et al. Demonstration of the first 4H-SiC avalanche photodiodes , 2000 .
[91] Jeffrey D. Beck,et al. MWIR HgCdTe avalanche photodiodes , 2001, SPIE Optics + Photonics.
[92] Mark A. Itzler,et al. Manufacturable planar bulk-InP avalanche photodiodes for 10 Gb/s applications , 1999, 1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009).
[93] John P. R. David,et al. Avalanche noise characteristics of thin GaAs structures with distributed carrier generation [APDs] , 2000 .