Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence
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Fernando Ponce | Jürgen Christen | F. Ponce | S. Tanaka | R. Liu | J. Christen | F. Bertram | T. Riemann | T. Riemann | F. Bertram | S. Tanaka | S. Srinivasan | R. Liu | L. Geng | H. Omiya | Y. Nakagawa | Y. Nakagawa | S. Srinivasan | H. Omiya | L. Geng
[1] S. Nakamura,et al. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes , 1999 .
[2] Kazumi Wada,et al. Spatially resolved cathodoluminescence spectra of InGaN quantum wells , 1997 .
[3] C. Thomsen,et al. Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy , 1999 .
[4] Kazumi Wada,et al. Exciton localization in InGaN quantum well devices , 1998 .
[5] Fernando Ponce,et al. Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence , 2001 .
[6] James S. Speck,et al. STRUCTURAL ORIGIN OF V-DEFECTS AND CORRELATION WITH LOCALIZED EXCITONIC CENTERS IN INGAN/GAN MULTIPLE QUANTUM WELLS , 1998 .
[7] Fernando Ponce,et al. Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells , 1999 .
[8] Kazumi Wada,et al. Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes , 2000 .