Space exploration of AlN pedestal waveguides for phase shifting applications

Aluminum nitride (AlN), which belongs to the family of the III-V semiconductors, is a material of great interest in the microelectronics industry due to its high decomposition temperature, good chemical stability, wide bandgap and CMOS compatibility. Moreover, AlN is known by its Pockels coefficients, which makes it very suitable for various non-linear optical devices. In this work, a study of a design space exploration of fundamental mode polarization in an AlN pedestal waveguide is proposed. The current work performs a dispersion analysis of this type of waveguide by varying the dimensions of the core and the pedestal. Lastly, electrode design for phase shifting analysis is also proposed. The data obtained with the exhibited work will allow the device designer to have a design space with light polarization control to stimulate the adequate electro-optic coefficient, with potential applications in modulators, switches, multiplexers, phase shifters, among others. A feasibility study will also be provided.

[1]  Chenglu Lin,et al.  AlN thin films grown by ion-beam-enhanced deposition and its application to SOI materials , 2002 .

[2]  I. Roskovcová,et al.  The Dispersion of the Refractive Index and the Birefringence of AlN , 1967, March 1.

[3]  A. Pisano,et al.  Piezoelectric Aluminum Nitride Vibrating Contour-Mode MEMS Resonators , 2006, Journal of Microelectromechanical Systems.

[4]  M. Kiuchi,et al.  Zinc-blende aluminum nitride formation using low-energy ion beam assisted deposition , 2006 .

[5]  J. Coutaz,et al.  Electro‐optical effect in aluminum nitride waveguides , 1992 .

[6]  C. Cabral,et al.  Synchrotron x-ray diffraction and transmission electron microscopy studies of interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayers , 2001 .

[7]  Yuan Dong,et al.  Aluminum Nitride Ultralow Loss Waveguides and Push-Pull Electro-Optic Modulators for Near Infrared and Visible Integrated Photonics , 2019, 2019 Optical Fiber Communications Conference and Exhibition (OFC).

[8]  R. Schlesser,et al.  Optical nonlinear and electro‐optical coefficients in bulk aluminium nitride single crystals , 2017 .

[9]  A. Hårsta,et al.  Synthesis of highly oriented piezoelectric AlN films by reactive sputter deposition , 2000 .

[10]  M. Paisley,et al.  Molecular beam epitaxy of nitride thin films , 1993 .

[11]  I. Malitson.  Interspecimen Comparison of the Refractive Index of Fused Silica , 1965 .

[12]  O. Elmazria,et al.  Aluminium nitride films deposition by reactive triode sputtering for surface acoustic wave device applications , 2003 .

[13]  D. Remiens,et al.  Growth and optical characterization of aluminum nitride thin films deposited on silicon by radio-frequency sputtering , 1999 .

[14]  N. Dagli.  Wide-bandwidth lasers and modulators for RF photonics , 1999 .

[15]  O. Mikami,et al.  Traveling wave optical modulator using a directional coupler LiNbO 3 waveguide , 1980 .

[16]  Study of the plasma etching process for low-loss SiO2/Si optical waveguides , 2005 .

[17]  Jingdong Luo,et al.  Photo-Stability Measurement of Electro-Optic Polymer Waveguides With High Intensity at 1550-nm Wavelength , 2009, Journal of Lightwave Technology.

[18]  S. Misawa,et al.  Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region , 1979 .

[19]  C. Xiong,et al.  Low-loss, silicon integrated, aluminum nitride photonic circuits and their use for electro-optic signal processing. , 2012, Nano letters.

[20]  Oliver Ambacher,et al.  Piezoelectric properties of polycrystalline AlN thin films for MEMS application , 2006 .

[21]  H. Uchida,et al.  Structural and chemical characteristics of (Ti,Al)N films prepared by ion mixing and vapor deposition , 2006 .

[22]  T. Taguchi,et al.  Growth and optical properties of AlN homoepitaxial layers grown by ammonia-source molecular beam epitaxy , 2007 .

[23]  Cao Huazhe,et al.  On the properties of AlN thin films grown by low temperature reactive r.f. sputtering , 1986 .

[24]  G. Lo,et al.  Aluminum nitride electro-optic phase shifter for backend integration on silicon. , 2016, Optics express.

[25]  Pedestal height influence on AlN pedestal-type optical waveguides , 2014, 2014 IEEE 9th IberoAmerican Congress on Sensors.

[26]  Yan Li,et al.  Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides. , 2007, Optics express.

[27]  C. Xiong,et al.  High-Q aluminum nitride photonic crystal nanobeam cavities , 2012 .