Metrology Development for the Nanoelectronics Industry at the National Institute of Standards and Technology
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[1] Hiroshi Inokawa,et al. Silicon single-electron devices , 2002 .
[2] E. Vogel,et al. A comparison of quantum-mechanical capacitance-voltage simulators , 2001, IEEE Electron Device Letters.
[3] J. Suehle. Ultrathin gate oxide reliability: physical models, statistics, and characterization , 2002 .
[4] Carsten P. Jensen,et al. Enhanced model for scanning tunneling microscope tip geometry measured with field ion microscopy , 2004 .
[5] James M. Tour,et al. Molecular Electronics: Commercial Insights, Chemistry, Devices, Architecture, and Programming , 2003 .
[6] Satoshi Gonda,et al. Dependence of morphology on miscut angle for Si(111) etched in NH4F , 2003 .
[7] Richard M. Silver,et al. Effects of etching time and wafer miscut on the morphology of etched Si(111) surfaces , 2002, Workshop on Nanostructure Science, Metrology, and Technology.
[8] Carsten P. Jensen,et al. Atomic-resolution measurements with a new tunable diode laser-based interferometer , 2004 .