论文信息 - Effect of pulse width on dynamic characteristics of high voltage IGBTs

Effect of pulse width on dynamic characteristics of high voltage IGBTs

High Voltage Insulated Gate Bipolar Transistors (HVIGBTs) are used in applications such as traction, medium voltage drives, and power distribution that have high reliability requirements requiring intimate knowledge of HVIGBT performance and limitations at different operation conditions. Transient processes inside the semiconductor device after turn-on require time to reach a stable state. If this stable state is not yet reached before the ensuing turn-off event, the IGBT and Freewheeling diode (FWDi) conduction time influences the switching behavior. This effect is analyzed in this paper. The experimental investigation is done on HVIGBT modules with different blocking voltage ratings. Results are reported normalized to the stable state condition.

[1] Madhan Shridhar Phadke,et al. Quality Engineering Using Robust Design , 1989 .

[2] Munaf Rahimo,et al. SPT + , the Next Generation of Low-Loss HV-IGBTs , 2005 .

[3] J.F. Donlon,et al. Design and Development of New Robust 3.3kV IGBT and FWD Module Chips , 2007, 2007 IEEE Industry Applications Annual Meeting.

[4] J. Donlon,et al. 6.5kV IGBTs with improved Long Term DC Stability (LTDS) , 2012, 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[5] Vinod Kumar Khanna,et al. Insulated Gate Bipolar Transistor IGBT Theory and Design: Khanna/Insulated Gate Bipolar Transistor IGBT Theory and Design , 2003 .

[6] Vinod Kumar Khanna,et al. The insulated gate bipolar transistor (IGBT) : theory and design , 2003 .