论文信息 - FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2 - 字舞流文

FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2

Tianchun Ye | H. Yin | Huilong Zhu | Wenwu Wang | Z. Kong | Junjie Li | Qingzhu Zhang | Zhaohao Zhang | Gaobo Xu | J. Xiang | Zhaozhao Hou | Zhenhua Wu | Qiuxia Xu | Yongkui Zhang