Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge
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We report the relative intensity noise (RIN) characteristics of an InAs quantum dot (Qdot) laser epitaxially grown on the Ge substrate. It is found that the minimum RIN of the Ge-based Qdot laser is around −120 dB/Hz, which is 15 dB higher than that of a native GaAs-based Qdot laser with the same layer structure. The higher RIN in the Ge-based laser can be attributed to the high-density epitaxial defects of threading dislocations and antiphase domain boundaries.