Electrodes for nanodot-based gas sensors
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[1] R. M. Silver,et al. Direct writing with the scanning tunneling microscope , 1988 .
[2] I. Rangelow,et al. Bilayer resist process for exposure with low-voltage electrons (STM-lithography) , 1996 .
[4] Marie Angelopoulos,et al. Conducting polyanilines: Discharge layers for electron‐beam lithography , 1989 .
[5] Sinclair S. Yee,et al. Transition between neck-controlled and grain-boundary-controlled sensitivity of metal-oxide gas sensors , 1995 .
[6] J. Brezmes,et al. Numerical simulation of the electrode geometry and position effects on semiconductor gas sensor response , 1998 .
[7] Paul L. McEuen,et al. Fabrication of metallic electrodes with nanometer separation by electromigration , 1999 .
[8] W. W. Molzen,et al. Proximity correction for electron beam lithography using a three‐Gaussian model of the electron energy distribution , 1989 .
[9] G. Mladenov,et al. A program for Monte Carlo simulation of penetration and scattering of accelerated electrons in multicomponent multilayer targets , 1996 .
[10] P. Nellist,et al. Direct electron beam writing of nanostructures using passivated gold clusters , 2000 .
[11] I-Ming Hsing,et al. An experimental study on high-temperature metallization for micro-hotplate-based integrated gas sensors , 2002 .
[12] Gerd Sulz,et al. Thin-film SnO2 sensor arrays controlled by variation of contact potential—a suitable tool for chemometric gas mixture analysis in the TLV range , 1997 .
[13] Yulong Xu,et al. Metal-semiconductor ohmic contact of SnO2-based ceramic gas sensors , 1997 .
[14] Bernard Fay,et al. Advanced optical lithography development, from UV to EUV , 2002 .
[15] R. Palmer,et al. Electron beam lithography in passivated gold nanoclusters , 2001 .
[16] Norman F. Sheppard,et al. Electrical conductivity measurements using microfabricated interdigitated electrodes , 1993 .
[17] A. N. Broers,et al. 250‐Å linewidths with PMMA electron resist , 1978 .
[18] S. Kowel,et al. A capacitance sensor for on-line monitoring of ultrathin polymeric film growth , 1988 .
[19] H. Ahmed,et al. Comparison of MIBK/IPA and water/IPA as PMMA developers for electron beam nanolithography , 2002 .
[20] L. P. Kouwenhoven,et al. Nanometer-spaced electrodes with calibrated separation , 2002 .
[21] David R. Allee,et al. Direct nanometer scale patterning of SiO2 with electron beam irradiation through a sacrificial layer , 1990 .
[22] Lloyd L. Chase,et al. Changes in the Electronic Properties of Si Nanocrystals as a Function of Particle Size , 1998 .
[23] Wei Chen,et al. Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron‐beam lithography and polymethylmethacrylate resist , 1993 .
[24] Pietro Siciliano,et al. Moisture influence and geometry effect of Au and Pt electrodes on CO sensing response of SnO2 microsensors based on sol–gel thin film , 2001 .
[25] David E. Williams,et al. Theory of self-diagnostic sensor array devices using gas-sensitive resistors , 1995 .
[26] Reuter,et al. Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching , 2000, Ultramicroscopy.
[27] D. Cumming,et al. 3 nm NiCr wires made using electron beam lithography and PMMA resist , 1996 .
[28] Organized molecular assemblies for scanning probe microscope lithography , 2002 .
[29] Geraint Williams,et al. Gas sensing properties of nanocrystalline metal oxide powders produced by a laser evaporation technique , 1998 .
[30] S. Chou,et al. 10 nm electron beam lithography and sub-50 nm overlay using a modified scanning electron microscope , 1993 .
[31] Hengpeng Wu,et al. Nanocomposite resists for electron beam nanolithography , 2001 .
[32] H. Nozawa,et al. A nano-composite resist system: a new approach to nanometer pattern fabrication , 1997 .
[33] K. Steiner,et al. Contact and sheet resistance of SnO2 thin films from transmission-line model measurements , 1995 .
[34] H. Seggern,et al. Patterning of an electron beam resist with a scanning tunnelling microscope operating in air , 1995 .
[35] Josef Binder,et al. Fluid characterization using sensor elements based on interdigitated electrodes , 1996 .
[36] P. Blanckenhagen,et al. Atomic force microscope as a tool for metal surface modifications , 1995 .
[37] Nongjian Tao,et al. Electrochemical fabrication of atomically thin metallic wires and electrodes separated with molecular-scale gaps , 2002 .
[38] Douglas M. Preble,et al. Sub-100 nm silicon on insulator complimentary metal–oxide semiconductor transistors by deep ultraviolet optical lithography , 2000 .
[39] Y. Wada,et al. Possible application of micromachine technology for nanometer lithography , 1998 .
[40] Nongjian Tao,et al. Quantized tunneling current in the metallic nanogaps formed by electrodeposition and etching , 2000 .
[41] Wei He,et al. Nanocomposite resist systems for next generation lithography , 2002 .
[42] D. Kohl,et al. Nanostructured semiconductor gas sensors to overcome sensitivity limitations due to percolation effects , 1999 .
[43] Calvin F. Quate,et al. Scanning probes as a lithography tool for nanostructures , 1997 .
[44] R. Blaikie,et al. Sub-diffraction-limited patterning using evanescent near-field optical lithography , 1999 .
[45] N. C. MacDonald,et al. A program for Monte Carlo simulation of electron energy loss in nanostructures , 1989 .
[46] Chao-Nan Xu,et al. Grain size effects on gas sensitivity of porous SnO2-based elements , 1991 .
[47] Nanometer scale patterning by scanning tunneling microscope assisted chemical vapour deposition , 2000 .
[48] S. G. Ansari,et al. Grain size effects on H2 gas sensitivity of thick film resistor using SnO2 nanoparticles , 1997 .
[49] David E. Williams,et al. Tin dioxide gas sensors. Part 1.—Aspects of the surface chemistry revealed by electrical conductance variations , 1987 .
[50] Monica Cǎldǎraru,et al. Surface dynamics in tin dioxide-containing catalysts II. Competition between water and oxygen adsorption on polycrystalline tin dioxide , 1996 .
[51] M. Goh,et al. Orientational Ordering of Polymers by Atomic Force Microscope Tip-Surface Interaction , 1992, Science.
[52] G. Faini,et al. Novel nanofabrication method of high temperature metallic Coulomb blockade devices , 1996 .
[53] D. B. Robinson,et al. Controlled fabrication of metallic electrodes with atomic separation , 1999 .
[54] C. Schönenberger,et al. Fabrication of metallic nanowires with a scanning tunneling microscope , 1995 .
[55] D. Rugar,et al. Thermomechanical writing with an atomic force microscope tip , 1992 .
[56] Eunsung Seo,et al. Determination of proximity effect parameters and the shape bias parameter in electron beam lithography , 2000 .
[57] Shazia Yasin,et al. Nanolithography using ultrasonically assisted development of calixarene negative electron beam resist , 2001 .
[58] R. Palmer,et al. Mechanism of electron-beam writing in passivated gold nanoclusters , 2001 .
[59] Roger Fabian W. Pease,et al. Lift‐off metallization using poly(methyl methacrylate) exposed with a scanning tunneling microscope , 1988 .
[60] L. Grella,et al. Energy density function determination in very‐high‐resolution electron‐beam lithography , 1990 .
[61] Zhan-guo Wang,et al. Some new observation on the formation and optical properties of Cds clusters in zeolite-Y , 1996 .
[62] S. Gwo. Scanning probe oxidation of Si3N4 masks for nanoscale lithography, micromachining, and selective epitaxial growth on silicon , 2001 .
[63] Toshiro Endo,et al. Nanoscale layer removal of metal surfaces by scanning probe microscope scratching , 1995 .
[64] R. Blaikie,et al. Nanolithography using optical contact exposure in the evanescent near field , 1999 .
[65] John F. Vetelino,et al. Characterization of a WO3 thin film chlorine sensor , 2001 .
[67] M. Lumbreras,et al. Electrode nature effects on stannic oxide type layers prepared by electrostatic spray deposition , 1999 .
[68] Franco Cerrina,et al. Can proximity x-ray lithography print 35 nm features? Yes , 2001 .
[69] G. K. Reeves,et al. Obtaining the specific contact resistance from transmission line model measurements , 1982, IEEE Electron Device Letters.
[70] G. Owen. Methods for proximity effect correction in electron lithography , 1990 .
[71] H. Craighead,et al. Self‐assembled monolayer electron beam resist on GaAs , 1993 .
[72] A. Broers,et al. Electron beam lithography-Resolution limits , 1996 .
[73] U. Kleineberg,et al. Nanopatterning of Au absorber films on Mo/Si EUV multilayer mirrors by STM lithography in self-assembled monolayers , 2000 .
[74] David L. Windt,et al. Reduction imaging at 14 nm using multilayer‐coated optics: Printing of features smaller than 0.1 μm , 1990 .
[75] G. D. Alley. Interdigital Capacitors and Their Application to Lumped-Element Microwave Integrated Circuits , 1970 .
[76] Richard J. Blaikie,et al. 70 nm Features on 140 nm period using evanescent near field optical lithography , 2000 .
[77] Matthijs W. den Otter,et al. Approximate expressions for the capacitance and electrostatic potential of interdigitated electrodes , 2002 .
[78] Lloyd R. Harriott,et al. Limits of lithography , 2001, Proc. IEEE.
[79] T. Jenkins,et al. Quantitative evaluation of electron beam writing in passivated gold nanoclusters , 2001 .
[80] Harold G. Craighead,et al. 10‐nm linewidth electron beam lithography on GaAs , 1983 .
[81] H. Beneking,et al. The resolution of the inorganic electron beam resist LiF(AlF3) , 1994 .