论文信息 - An improved analytical model for short-channel MOSFETs

An improved analytical model for short-channel MOSFETs

An analytical model for short-channel MOSFETs including all second-order effects is proposed with a significant improvement on the saturation region operation. This model requires no numerical iterations and describes channel-length modulations of submicrometer MOS devices more accurately than other existing models. In addition, the influence of both the source-drain resistance and short-channel effects on the lateral channel electric field is also investigated. >

Wu-Shiung Feng | Hwang-Cherng Chow

[1] J.S.T. Huang. An analytical model for LDD drain structures , 1988 .

[2] R. Gharabagi,et al. A charge-based model for short-channel MOS transistor capacitances , 1990 .

[3] P. Ko. Hot-Electron Effects in Mosfets. , 1982 .

[4] Wu-Shiung Feng,et al. An analytical CMOS inverter delay model including channel-length modulations , 1992 .

[5] J. T. Clemens,et al. Characterization of the electron mobility in the inverted <100> Si surface , 1979, 1979 International Electron Devices Meeting.

[6] Michael S. Shur,et al. New short-channel n-MOSFET current-voltage model in strong inversion and unified parameter extraction method , 1991 .

[7] Bing J. Sheu,et al. BSIM: Berkeley short-channel IGFET model for MOS transistors , 1987 .

[8] S. G. Chamberlain,et al. Analytic and iterative transit-time models for VLSI MOSFETs in strong inversion , 1990 .

[9] Y.A. El-Mansy,et al. A simple two-dimensional model for IGFET operation in the saturation region , 1977, IEEE Transactions on Electron Devices.

[10] M. El-Nokali,et al. A simple analytical model for hot-carrier MOSFETs , 1989 .

[11] H. Sibbert,et al. Model and performance of hot-electron MOS transistors for VLSI , 1979 .