论文信息 - MICROWAVE INTENSITY AND FREQUENCY MODULATION OF HETEROEPITAXIAL-RIDGE-OVERGROWN DISTRIBUTED FEEDBACK LASERS.

MICROWAVE INTENSITY AND FREQUENCY MODULATION OF HETEROEPITAXIAL-RIDGE-OVERGROWN DISTRIBUTED FEEDBACK LASERS.

The intensity and frequency modulation response of heteroepitaxial‐ridge‐overgrown distributed feedback lasers are characterized as a function of modulation frequency from 0.2 to as high as 17 GHz. Small‐signal intensity modulation measurements show a −3 dB frequency of 7.1 GHz. Efficient frequency modulation (>0.1 GHz/mA) is demonstrated for modulation frequencies up to 13 GHz. A new standard for comparing semiconductor lasers, the chirp to modulated power ratio, is suggested as a means of comparing semiconductor lasers and as an aid to understanding the interaction of FM and IM in a semiconductor laser.

[1] K. Vahala,et al. Measurement of the linewidth enhancement factor α of semiconductor lasers , 1983 .

[2] Uziel Koren,et al. High‐speed analog and digital modulation of 1.51‐μm wavelength, three‐channel buried crescent InGaAsP lasers , 1984 .

[3] R. Logan,et al. A new high‐power, narrow‐beam transverse‐mode stabilized semiconductor laser at 1.5 μm: the heteroepitaxial ridge‐overgrown laser , 1984 .

[4] C. Henry. Theory of the linewidth of semiconductor lasers , 1982 .

[5] N. Olsson,et al. Heteroepitaxial ridge‐overgrown distributed feedback laser at 1.5 μm , 1984 .

[6] Gad Koren,et al. CO2 laser assisted UV ablative photoetching of Kapton films , 1984 .

[7] Yoshihisa Yamamoto,et al. Direct frequency modulation in AlGaAs semiconductor lasers , 1982 .

[8] C. Burrus,et al. 6 GHz direct frequency modulation of cleaved-coupled-cavity channeled-substrate buried-heterostructure lasers , 1984, IEEE Journal of Quantum Electronics.