High Power Pseudomorphic Mid Ultraviolet Light Emitting Diodes with Improved Efficiency and Lifetime
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Leo J. Schowalter | Craig G. Moe | James R. Grandusky | Mark C. Mendrick | Shawn R. Gibb | Muhammad Jamil | Jianfeng Chen
[1] Leo J. Schowalter,et al. Pseudomorphic growth of thick n-type AlxGa1−xN layers on low-defect-density bulk AlN substrates for UV LED applications , 2009 .
[2] R. Gaska,et al. Reliability of Deep-UV Light-Emitting Diodes , 2008, IEEE Transactions on Device and Materials Reliability.
[3] Umesh K. Mishra,et al. Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures , 2003 .
[4] Michael Wraback,et al. High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance , 2011 .
[5] Toru Nagashima,et al. Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy , 2012 .
[6] Hongen Shen,et al. Current-induced degradation of high performance deep ultraviolet light emitting diodes , 2010 .
[7] Michael S. Shur,et al. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10% , 2012 .
[8] Michael Wraback,et al. 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power , 2013 .