Epitaxial NiSi2 and CoSi2 Interfaces
暂无分享,去创建一个
[1] Tung,et al. X-ray interference method for studying interface structures. , 1988, Physical review. B, Condensed matter.
[2] Tung,et al. Surface structure of thin epitaxial CoSi2 grown on Si(111). , 1988, Physical review. B, Condensed matter.
[3] E. Baerends,et al. MSi_{2}/Si(111) (M=Co,Ni) interface chemical bond , 1988 .
[4] Tung,et al. Origin of A- or B-type NiSii2 determined by in in situ transmission electron microscopy and diffraction during growth. , 1988, Physical review letters.
[5] R. T. Tung,et al. ‘‘Coreless defects’’ and the continuity of epitaxial NiSi2/Si(100) thin films , 1988 .
[6] R. Fathauer,et al. Room‐temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2 on Si (111) , 1988 .
[7] R. T. Tung,et al. Control of pinholes in epitaxial CoSi2 layers on Si(111) , 1988 .
[8] R. Fathauer,et al. Transmission electron microscopy study of the formation of epitaxial CoSi2/Si (111) by a room‐temperature codeposition technique , 1988 .
[9] H. Dr. New silicide interface model from structural energy calculations. , 1988 .
[10] H. Känel,et al. Schottky barriers of epitaxial NiSi2 on Si(111) , 1988 .
[11] Tung,et al. Origin of the excess capacitance at intimate Schottky contacts. , 1988, Physical review letters.
[12] J. C. Phillips,et al. Determination of lattice mismatch in NiSi2 overlayers on Si(111) , 1987 .
[13] C. D'anterroches,et al. Co/Si(111) interface: Formation of an initial CoSi2 phase at room temperature , 1987 .
[14] R. T. Tung,et al. Infrared absorption of epitaxial NiSi2 layers on Si(111) , 1987 .
[15] B. Hunt,et al. Interface structure and lattice mismatch of epitaxial CoSi2 on Si(111) , 1987 .
[16] Fischer,et al. Structure determination of the CoSi2:Si(111) interface by x-ray standing-wave analysis. , 1987, Physical review. B, Condensed matter.
[17] H. Känel,et al. On the growth of CoSi2 and CoSi2/Si heterostructures on Si(111) , 1987 .
[18] R. T. Tung,et al. In situ study of the molecular beam epitaxy of CoSi2 on (111) Si by transmission electron microscopy and diffraction , 1987 .
[19] P. Bennett,et al. Crystalline intermediate phases in the formation of epitaxial NiSi2 on Si(111) , 1987 .
[20] Weaver,et al. High-resolution photoemission study of Co/Si(111) interface formation. , 1987, Physical review. B, Condensed matter.
[21] S. Ossicini,et al. The electronic properties of Silicon - Silicide epitaxial interfaces , 1987 .
[22] Y. Kao,et al. On the Critical Layer Thickness of Strained-Layer Heteroepitaxial CoSi 2 Films on 〈111〉Si , 1987 .
[23] J. Phillips,et al. Characterization of Ultrathin Cosi 2 on Si(111) Layers. , 1987 .
[24] J. V. D. Veen,et al. Geometric structure of the NiSi2-Si(111) interface: An x-ray standing-wave analysis , 1986 .
[25] Tung,et al. Schottky-barrier heights of single-crystal NiSi2 on Si(111): The effect of a surface p-n junction. , 1986, Physical review. B, Condensed matter.
[26] C. D'anterroches,et al. Structural analysis of an Si/CoSi2/Si heterostructure using ultrahigh resolution transmission electron microscopy , 1986 .
[27] R. T. Tung,et al. Control of a natural permeable CoSi2 base transistor , 1986 .
[28] J. H. Weaver,et al. Modeling homogeneous and heterogeneous metal/semiconductor interface reactions with photoemission and angle-resolved auger spectroscopy , 1986 .
[29] R. Cinti,et al. Local structure determination of the CoSi(111) interface by surface electron energy-loss fine-structure technique , 1986 .
[30] Evans,et al. Electronic states at silicide-silicon interfaces. , 1986, Physical review letters.
[31] A. Chantre,et al. Electron Transport Through Epitaxial Metal/Semiconductor Heterostructures , 1986 .
[32] T. C. Mcgill,et al. Schottky barrier height measurements of epitaxial NiSi2 on Si , 1985 .
[33] Ho,et al. Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si(111). , 1985, Physical review letters.
[34] S. Delage,et al. Kinetics of formation and properties of epitaxial CoSi2 films on Si (111) , 1985 .
[35] Y. Kao,et al. Uniformity and crystalline quality of CoSi2/Si heterostructures grown by molecular beam epitaxy and reactive deposition epitaxy , 1985 .
[36] S. Delage,et al. Transient capacitance study of epitaxial CoSi2/Si〈111〉 Schottky barriers , 1985 .
[37] Valeri,et al. Real-space determination of atomic structure and bond relaxation at the NiSi2-Si(111) interface. , 1985, Physical review letters.
[38] B. Hunt,et al. GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi 2 AND Si/CoSi 2 /Si HETEROSTRUCTURES , 1985 .
[39] Y. Shiraki,et al. Formation of Embedded Monocrystalline NiSi2 Grid Layers in Silicon by MBE , 1984 .
[40] C. Humphreys,et al. The atomic structure of the NiSi2-(001)Si interface , 1984 .
[41] R. T. Tung. Schottky barrier heights of single crystal silicides on Si(111) , 1984 .
[42] J. Derrien,et al. Cobalt disilicide epitaxial growth on the silicon (111) surface , 1984 .
[43] J. Poate,et al. Growth of single crystal epitaxial silicides on silicon by the use of template layers , 1983 .
[44] J. Poate,et al. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi 2 Epitaxial Structures , 1983 .
[45] J. Spence,et al. Atomic structure of the NiSi2/(111)Si interface , 1982 .
[46] J. Poate,et al. Direct determination of atomic structure at the epitaxial cobalt disilicide on (111) Si interface by ultrahigh resolution electron microscopy , 1982 .
[47] J. Poate,et al. Growth of single‐crystal CoSi2 on Si(111) , 1982 .
[48] H. Föll. Lattice Imaging of Silicide–Silicon Interfaces and the Interpretation of Interfacial Defects , 1982 .
[49] J. Poate,et al. Structural Studies of Metal-Semiconductor Interfaces with High-Resolution Electron Microscopy , 1982 .
[50] T. T. Sheng,et al. Interface and surface structure of epitaxial NiSi2 films , 1981 .
[51] H. Ishiwara,et al. Single Crystalline Silicide Formation , 1981 .
[52] J. Poate,et al. Silicon/metal silicide heterostructures grown by molecular beam epitaxy , 1980 .
[53] H. Ishiwara,et al. Double heteroepitaxy in the Si (111)/CoSi2/Si structure , 1980 .