Ni silicide layer formation using low-energy ion beams

[1]  A. Chayahara,et al.  Ion-Beam 3C–SiC Heteroepitaxy on Si , 2002 .

[2]  A. Chayahara,et al.  Epitaxial Growth of Pure 28Si Thin Films Using Isotopically Purified Ion Beams , 2001 .

[3]  H. Ikeda,et al.  Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts , 2001 .

[4]  A. Chayahara,et al.  OPTICAL PROPERTIES OF CARBON AND CARBON NITRIDE FILMS PREPARED BY MASS-SEPARATED ENERGETIC NEGATIVE CARBON AND CARBON NITROGEN IONS , 1999 .

[5]  J. Dekoster,et al.  Concentration-controlled phase selection of silicide formation during reactive deposition , 1999 .

[6]  R. Nemanich,et al.  Role of the substrate strain in the sheet resistance stability of NiSi deposited on Si(100) , 1999 .

[7]  M. Nicolet,et al.  Nickel film on (001) SiC: Thermally induced reactions , 1998 .

[8]  Chu,et al.  Ion-energy effects in silicon ion-beam epitaxy. , 1996, Physical review. B, Condensed matter.

[9]  E. Colgan Activation energy for Pt_2Si and PtSi formation measured over a wide range of ramp rates , 1995 .

[10]  Karen Maex,et al.  Properties of metal silicides , 1995 .

[11]  C. Colin,et al.  Solid states solubility of aluminum in the δ-Ni2Si nickel silicide , 1993 .

[12]  W. Eckstein,et al.  Subplantation model for film growth from hyperthermal species. , 1990, Physical review. B, Condensed matter.

[13]  Lifshitz,et al.  Subplantation model for film growth from hyperthermal species: Application to diamond. , 1989, Physical review letters.

[14]  O. W. Holland,et al.  Metal Silicides Formed by Direct Ion Beam Deposition , 1988 .

[15]  Lawrence H. Bennett,et al.  Binary alloy phase diagrams , 1986 .

[16]  J. E. E. Baglin,et al.  Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds , 1984 .

[17]  Shyam P Murarka,et al.  Silicides for VLSI Applications , 1983 .