Electromigration in On-Chip Single/Dual Damascene Cu Interconnections

The electromigration lifetime in multilevel Cu damascene interconnects has been investigated. The Cu lifetime was strongly influenced by the diffusion barrier liner at the cathode end of the line. This partial blocking boundary at the Cu via/Cu line interface can drastically change the Cu lifetime. A triple-log-normal function was used to analyze the failure distribution in a dual-damascene interconnect. The failure mechanism in the Cu line/Cu via dual-damascene line with thin liner at the interface was similar to the result obtained when testing a single stripe with large reservoirs. The electromigration activation energies for unpassivated Cu lines tested in nitrogen and forming gas (N 2 + 5% H 2 ) were found to be 0.7 and 0.9 ± 0.1 eV, respectively.

[1]  D. Klaus,et al.  A high performance liner for copper damascene interconnects , 2001, Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).

[2]  Robert Rosenberg,et al.  Mechanisms for very long electromigration lifetime in dual-damascene Cu interconnections , 2001 .

[3]  J. S. Huang,et al.  Direct observation of void morphology in step-like electromigration resistance behavior and its correlation with critical current density , 2001 .

[4]  Daniel C. Edelstein,et al.  A high performance 0.13 /spl mu/m copper BEOL technology with low-k dielectric , 2000, Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).

[5]  A. von Glasow,et al.  Experimental data and statistical models for bimodal EM failures , 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

[6]  Jean-Pierre Celis,et al.  Microtexture and electromigration-induced drift in electroplated damascene Cu , 2000 .

[7]  C. Cabral,et al.  Mechanisms for microstructure evolution in electroplated copper thin films near room temperature , 1999 .

[8]  B. Agarwala,et al.  Scaling effect on electromigration in on-chip Cu wiring , 1999, Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).

[9]  Lucile Arnaud,et al.  Microstructure and electromigration in copper damascene lines , 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

[10]  Chao-Kun Hu,et al.  Copper interconnections and reliability , 1998 .

[11]  R. Carruthers,et al.  Electromigration in 0.25 μm wide Cu line on W , 1997 .

[12]  R. Vook.  Electrical control of surface electromigration damage , 1997 .

[13]  C-K. Hu,et al.  Electromigration Drift Velocity in Al‐Alloy and Cu‐Alloy Lines , 1996 .

[14]  D. J. Pearson,et al.  Copper interconnection integration and reliability , 1995 .

[15]  P. S. Ho,et al.  Diffusion Phenomena in Thin Films and Microelectronic Materials , 1989 .

[16]  I. Blech.  Electromigration in thin aluminum films on titanium nitride , 1976 .

[17]  J. R. Manning,et al.  Diffusion in Copper and Copper Alloys. Part I. Volume and Surface Self‐Diffusion in Copper , 1973 .

[18]  F. Delamare,et al.  Increase in the surface self-diffusion of copper due to the chemisorption of halogens , 1971 .

[19]  Steven J. Rothman,et al.  Isotope Effect and Divacancies for Self-Diffusion in Copper , 1969 .