论文信息 - Static memory element based on electron Y-branch switch

Static memory element based on electron Y-branch switch

A compact memory element based on an electron Y-branch switch has been realised. Memory operation is a result of bilateral feedback coupling of each of the branches to the opposing side-gate. D-flip-flop in addition to RS-flip-flop operation is demonstrated.

Alfred Forchel | S. Reitzenstein | L. Worschech | D. Hartmann

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