From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena
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A. Umbert | B. Giffard | Michel Bruel | J. Margail | R. Truche | O. Musseau | J. L. Leray | P. Lalande | E. Dupont-Nivet | P. Lalande | R. Truche | J. Leray | O. Musseau | M. Bruel | E. Dupont-Nivet | A. Auberton-Herve | Y. Coic | A. Umbert | J. F. Pere | C. Jaussaud | J. Margail | B. Giffard | F. Martin | A. J. Auberton-Herve | Y. M. Coic | C. Jaussaud | F. Martin
[2] Michel Bruel,et al. New conditions for synthesizing SOI structures by high dose oxygen implantation , 1985 .
[3] G. E. Davis,et al. Transient Radiation Effects in SOI Memories , 1985, IEEE Transactions on Nuclear Science.
[4] R. E. Mikawa,et al. Transient Radiation Effects in SOI Static RAM Cells , 1987, IEEE Transactions on Nuclear Science.
[5] H. T. Weaver,et al. Radiation-Tolerant, Sidewall-Hardened SOI/MOS Transistors , 1987, IEEE Transactions on Nuclear Science.