Investigation of the impact of the oxide thickness and RESET conditions on disturb in HfO2-RRAM integrated in a 65nm CMOS technology

In this work, a comprehensive investigation of disturb in HfO2-Resistive Random Access Memories (RRAM) integrated in an advanced 65nm technology is presented. The effects of the oxide thickness and RESET conditions on disturb immunity of the High-Resistance-State (HRS) are explored. Constant Voltage Stress is applied on a large amount of samples at various temperatures. Data are collected and analyzed on a statistical basis. The SET dependence to the RESET conditions is investigated and correlated to the length of the induced depleted gap along the conductive filament. The conduction mechanism of the HRS is correlated to the failure/SET process of the RRAM device through a voltage acceleration model. It is shown that thicker dielectric oxide and stronger RESET conditions give rise to longer failure times.

[1]  H. Y. Lee,et al.  The highly scalable and reliable hafnium oxide ReRAM and its future challenges , 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

[2]  Ru Huang,et al.  Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM , 2011, 2011 International Reliability Physics Symposium.

[3]  Tuo-Hung Hou,et al.  Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage Stress , 2012, IEEE Electron Device Letters.

[4]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[5]  S. Balatti,et al.  Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study , 2012, IEEE Transactions on Electron Devices.

[6]  John G. Simmons,et al.  Poole-Frenkel Effect and Schottky Effect in Metal-Insulator-Metal Systems , 1967 .

[7]  Hisashi Shima,et al.  Resistive Random Access Memory (ReRAM) Based on Metal Oxides , 2010, Proceedings of the IEEE.

[8]  D. Gilmer,et al.  Controlling uniformity of RRAM characteristics through the forming process , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

[9]  C. Cagli,et al.  Experimental and theoretical study of electrode effects in HfO2 based RRAM , 2011, 2011 International Electron Devices Meeting.

[10]  S. Balatti,et al.  Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling , 2012, IEEE Transactions on Electron Devices.