论文信息 - Impact of metal gate deposition method on characteristics of gate-first MOSFET with Hf-silicate

Impact of metal gate deposition method on characteristics of gate-first MOSFET with Hf-silicate

This paper compares metal oxide semiconductor field effect transistor MOSFET characteristics of TiN metal gate deposited by atomic layer deposition ALD and chemical vapor deposition CVD on Hf-based high-k dielectrics. Despite many similarities between these two techniques, clear differences were found in device characteristics such as equivalent oxide thickness EOT , mobility, dopant diffusion, and trap generation. ALD TiN results in a thicker EOT than CVD TiN due to its inherent purging cycle and higher process temperature, but it has a stronger resistance to dopant diffusion. The ALD TiN process also provides better interfacial characteristics, thus better device performance. © 2005 The Electrochemical Society. DOI: 10.1149/1.2007407 All rights reserved.

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