Technology CAD (TCAD) Simulations of Mg2Si/Si Heterojunction Photodetector Based on the Thickness Effect

Research on infrared detectors has been widely reported in the literature. For infrared detectors, PbS, InGaAs, PbSe, InSb, and HgxCd1-xTe materials are the most widely used and have been explored for photodetection applications. However, these are toxic and harmful substances which are not conducive to the sustainable development of infrared detectors and are not eco-friendly. Mg2Si is a green, healthy, and sustainable semiconductor material that has the potential to replace these toxic and damaging photoelectric materials, making photoelectric detectors (PDs) green, healthy, and sustainable. In this work, we report on the results of our simulation studies on the PN junction Mg2Si/Si heterojunction PD. A model structure of Mg2Si/Si heterojunction PD has been built. The effects of Mg2Si and Si layer thickness on the optical and electrical performance of Mg2Si/Si heterojunction PD are discussed. For the purpose of this analysis, we consider electrical performance parameters such as I–V curve, external quantum efficiency (EQE), responsivity, noise equivalent power (NEP), detectivity, on-off ratio, response time, and recovery time. The simulation results show that the Mg2Si/Si heterojunction PD shows optimum performance when the thickness of Si and Mg2Si layers are 300 nm and 280 nm, respectively. For the optimized structure, the reverse breakdown voltage was found to be −23.61 V, the forward conduction voltage was 0.51 V, the dark current was 5.58 × 10−13 A, and the EQE was 88.98%. The responsivity was found to be 0.437 A/W, the NEP was 6.38 × 10−12 WHz1/2, and the detectivity was 1.567 × 1011 Jones. With the on-off ratio of 1566, the response time was found to be 0.76 ns and the recovery time was 5.75 ns. The EQE and responsivity peak wavelength of PD show a redshift as the thickness of Mg2Si increases. The Mg2Si heterojunction PD can effectively detect infrared light in the wavelength range of 400 to 1400 nm. The simulation results can be utilized to drive the development of green Mg2Si/Si heterojunction PD in the future.

[1]  G. Shao,et al.  Simulation of planar Si/Mg 2 Si/Si p-i-n heterojunction solar cells for high efficiency , 2017 .

[2]  F. Liang,et al.  Light Confinement Effect Induced Highly Sensitive, Self-Driven Near-Infrared Photodetector and Image Sensor Based on Multilayer PdSe2 /Pyramid Si Heterojunction. , 2019, Small.

[3]  Ruirun Chen,et al.  Improvement of Microstructure and Mechanical Properties of Near‐Eutectic Al–Mg2Si Alloys by Eu Addition , 2021, Advanced Engineering Materials.

[4]  Bing-she Xu,et al.  Energy-Efficient Synthesis and Superior Thermoelectric Performance of Sb-doped Mg2Si0.3Sn0.7 Solid Solutions by Rapid Thermal Explosion , 2020 .

[5]  F. Liang,et al.  Fabrication of PdSe2/GaAs heterojunction for sensitive near-infrared photovoltaic detector and image sensor application , 2020 .

[6]  Hongwei Zhu,et al.  Photo-induced selective gas detection based on reduced graphene oxide/Si Schottky diode , 2015 .

[7]  H. Yu,et al.  Effects of annealing on the formation of Mg2Si film prepared by resistive thermal evaporation method , 2013, Journal of Materials Science: Materials in Electronics.

[8]  Masakazu Aono,et al.  ZnO-Based Ultraviolet Photodetectors , 2010, Sensors.

[9]  Jianxiang Xu,et al.  SnS2/Si vertical heterostructure for high-performance photodetection with large photocurrent and fast speed , 2020 .

[10]  M. Isshiki,et al.  Infrared photoresponse from pn-junction Mg2Si diodes fabricated by thermal diffusion , 2013 .

[11]  Zhiwu Han,et al.  Effect of Si content on microstructure and compressive properties of open-cell Mg composite foams reinforced by in-situ Mg2Si compounds , 2020, Materials Characterization.

[12]  F. Liang,et al.  PdSe2 Multilayer on Germanium Nanocones Array with Light Trapping Effect for Sensitive Infrared Photodetector and Image Sensing Application , 2019, Advanced Functional Materials.

[13]  Yongyao Xia,et al.  Highly stable carbon coated Mg2Si intermetallic nanoparticles for lithium-ion battery anode , 2018 .

[14]  Q. Xie,et al.  Photoluminescence of Mg2Si films fabricated by magnetron sputtering , 2017 .

[15]  D. Wei,et al.  Broadband InSb/Si heterojunction photodetector with graphene transparent electrode , 2020, Nanotechnology.

[16]  Chen Zhiming,et al.  SiCGe/SiC heterojunction and its MEDICI simulation of optoelectronic characteristics , 2005 .

[17]  K. Alameh,et al.  Bimetallic non-alloyed NPs for improving the broadband optical absorption of thin amorphous silicon substrates , 2014, Nanoscale Research Letters.

[18]  Fouad Karouta,et al.  High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors , 2011 .

[19]  Y. Matsushita,et al.  Preparation and some properties of Mg2Si0.53Ge0.47 single crystal and Mg2Si0.53Ge0.47 pn-junction diode , 2018, AIP Advances.

[20]  Xinming Li,et al.  TiO2 enhanced ultraviolet detection based on a graphene/Si Schottky diode , 2015 .

[21]  Swastik Kar,et al.  Tunable graphene-silicon heterojunctions for ultrasensitive photodetection. , 2013, Nano letters.

[22]  Jaya Madan,et al.  Effect of structural and temperature variations on perovskite/Mg2Si based monolithic tandem solar cell structure , 2020 .

[23]  Jia Xu,et al.  Self-powered ultrafast broadband photodetector based on p-n heterojunctions of CuO/Si nanowire array. , 2014, ACS applied materials & interfaces.

[24]  N. S. Das,et al.  Topological Insulator Bi2Se3/Si-Nanowire-Based p-n Junction Diode for High-Performance Near-Infrared Photodetector. , 2017, ACS applied materials & interfaces.

[25]  H. W. Liu,et al.  Computational design of high efficiency FeSi2 thin-film solar cells , 2011 .

[26]  Yu-Siang Luo,et al.  Effects of La doping on Mg2Si semiconductor thin films prepared by thermal evaporation , 2018, Materials Research Express.

[27]  C-H. Solterbeck,et al.  Thickness and erbium doping effects on the electrical properties of lead zirconate titanate thin films , 2003 .

[28]  Takashi Kato,et al.  Optoelectronic properties of Mg2Si semiconducting layers with high absorption coefficients , 2011 .

[29]  Zhenzhong Zhang,et al.  Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3 , 2018, RSC advances.

[30]  K. Ohdaira,et al.  Probing the Mg2Si/Si(1 1 1) heterojunction for photovoltaic applications , 2020, Solar Energy.

[31]  Y. Mai,et al.  Self-powered, high-speed Sb2Se3/Si heterojunction photodetector with close spaced sublimation processed Sb2Se3 layer , 2018 .

[32]  Ching-Ho Tien,et al.  The Effects of Temperature on the Growth of a Lead-Free Perovskite-Like (CH3NH3)3Sb2Br9 Single Crystal for An MSM Photodetector Application , 2021, Sensors.