A −32dBm sensitivity RF power harvester in 130nm CMOS

This paper discusses a RF power harvester optimized for sensitivity and therefore wireless range, for applications requiring intermittent communication. The RF power harvester produces a 1V output at -32dBm sensitivity and 915MHz. This is achieved using a CMOS rectifier operating in the subthreshold region and an off-chip impedance matching network for boosting the received voltage. Equations predicting the rectifier performance are presented and verified through measurements of multiple rectifiers using different transistors in a 130nm CMOS process.

[1]  Soumyajit Mandal,et al.  Low-Power CMOS Rectifier Design for RFID Applications , 2007, IEEE Transactions on Circuits and Systems I: Regular Papers.

[2]  K. Kotani,et al.  High-Efficiency Differential-Drive CMOS Rectifier for UHF RFIDs , 2009, IEEE Journal of Solid-State Circuits.

[3]  F. De Flaviis,et al.  Power Harvester Design for Passive UHF RFID Tag Using a Voltage Boosting Technique , 2007, IEEE Transactions on Microwave Theory and Techniques.

[4]  G. Iannaccone,et al.  Design criteria for the RF section of UHF and microwave passive RFID transponders , 2005, IEEE Transactions on Microwave Theory and Techniques.

[5]  K. Mayaram,et al.  Efficient Far-Field Radio Frequency Energy Harvesting for Passively Powered Sensor Networks , 2008, IEEE Journal of Solid-State Circuits.

[6]  R. Fano.  Theoretical limitations on the broadband matching of arbitrary impedances , 1950 .

[7]  Chi-Ying Tsui,et al.  Analysis and Design Strategy of UHF Micro-Power CMOS Rectifiers for Micro-Sensor and RFID Applications , 2007, IEEE Transactions on Circuits and Systems I: Regular Papers.

[8]  J. Fellrath,et al.  CMOS analog integrated circuits based on weak inversion operations , 1977 .