Electro-thermal model of a high-voltage IGBT module for realistic simulation of power converters

This paper proposes the compact model development of a 6.5 kV field-stop IGBT module, for use in a circuit simulation environment. The model considers the realistic connection of IGBT-diode pairs: the description of semiconductor physics is coupled with self-heating effects; electro-magnetic phenomena associated with the package and layout are also taken into account. A selection of simulation examples demonstrates the validity of the proposed solution.

[1]  R. Kraus,et al.  Physics-based models of power semiconductor devices for the circuit simulator SPICE , 1998, PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference (Cat. No.98CH36196).

[2]  T. Laska.  The Field Stop IGBT (FS IGBT) A new device concept with a great improvement Potential , 2006 .

[3]  G. Wachutka,et al.  Numerical analysis tool for transient skin effect problems , 2004, 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551).

[4]  T. Laska,et al.  The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

[5]  J Gowar,et al.  Power Semiconductor Devices: Theory and Applications , 1999 .

[6]  Wolfgang Fichtner,et al.  Extraction of Accurate Thermal Compact Models for Fast Electro-Thermal Simulation of IGBT Modules in Hybrid Electric Vehicles , 2005, Microelectron. Reliab..

[7]  R. Kraus,et al.  The influence of the base resistance modulation on switching losses in IGBTS , 1996, IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting.

[8]  Tore Undeland,et al.  Power Electronics: Converters, Applications and Design , 1989 .

[9]  A. Hefner,et al.  Thermal component models for electro-thermal network simulations , 1993 .