Reflection high energy electron diffraction and X-ray studies of AlN films grown on Si(111) and Si(001) by organometallic chemical vapour deposition
暂无分享,去创建一个
[1] Takakazu Takahashi,et al. Effect of Hydrogen Gas on c-Axis Oriented AlN Films Prepared by Reactive Magnetron Sputtering , 1981 .
[2] K. Tsubouchi,et al. Aluminum Nitride Epitaxially Grown on Silicon: Orientation Relationships , 1981 .
[3] K. Tsubouchi,et al. Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition , 1981 .
[4] K. Kashiwagi,et al. Aluminum nitride films by rf reactive ion‐plating , 1980 .
[5] H. Hayakawa,et al. Reactive molecular beam epitaxy of aluminium nitride , 1979 .
[6] A. Itoh,et al. Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation , 1975 .
[7] A. J. Shuskus,et al. rf‐sputtered aluminum nitride films on sapphire , 1974 .
[8] H. M. Manasevit,et al. The Use of Metalorganics in the Preparation of Semiconductor Materials IV . The Nitrides of Aluminum and Gallium , 1971 .
[9] J. Duchêne. Radiofrequency reactive sputtering for deposition of aluminium nitride thin films , 1971 .
[10] D. Winslow,et al. VACUUM DEPOSITION OF AlN ACOUSTIC TRANSDUCERS , 1968 .
[11] T. Chu,et al. Epitaxial growth of aluminum nitride , 1967 .
[12] A. Itoh,et al. Investigation of the Reaction of Compound Formation in the Reactive Evaporation Process , 1974 .
[13] K. L. Chopra,et al. Thin Film Phenomena , 1969 .
[14] A. Noreika,et al. Dielectric Properties of Reactively Sputtered Films of Aluminum Nitride , 1969 .