centres in low dimensions: the strong-confinement approach

Negatively charged centres () formed in semiconductors by attaching a second electron to a shallow neutral hydrogenic donor () have been analysed in the quasi-zero- and quasi-one-dimensional limits. On the basis of the present and already known results for higher dimensions, it is proposed that ions support one and only one stable configuration which evolves continuously from the three-dimensional to the zero-dimensional limit.

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