A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier
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[1] K. Yamauchi,et al. A microwave miniaturized linearizer using a parallel diode , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.
[2] Ryo Ishikawa,et al. Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies , 2006, IEICE Trans. Electron..
[3] Y. Takayama,et al. A high-efficiency class-F GaN HEMT power amplifier with a diode predistortion linearizer , 2008, 2008 Asia-Pacific Microwave Conference.
[4] Songcheol Hong,et al. A predistortion linearizer using envelope-feedback technique with simplified carrier cancellation scheme for class-A and class-AB power amplifiers , 2000 .
[5] K. Halonen,et al. Effect of Envelope Detectors and Filters on a Digitally Controlled RF Predistortion System , 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.
[6] S. Boumaiza,et al. On the Robustness of Digital Predistortion Function Synthesis and Average Power Tracking for Highly Nonlinear Power Amplifiers , 2007, IEEE Transactions on Microwave Theory and Techniques.
[7] S. Gao,et al. High efficiency class-F RF/microwave power amplifiers , 2006, IEEE Microwave Magazine.
[8] F. Raab. Maximum efficiency and output of class-F power amplifiers , 2001 .
[9] P. Draxler,et al. Wideband Envelope Tracking Power Amplifiers With Reduced Bandwidth Power Supply Waveforms and Adaptive Digital Predistortion Techniques , 2009, IEEE Transactions on Microwave Theory and Techniques.