Influence of irradiation by 24 GeV protons on the properties of 4H–SiC radiation detectors

[1]  A. Cavallini,et al.  Low temperature annealing of electron irradiation induced defects in 4H-SiC , 2004 .

[2]  M. Skowronski,et al.  Electrical nonuniformities and their impact on the electron mobility in semi-insulating SiC crystals , 2004 .

[3]  H. Matsunami,et al.  Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) , 2004 .

[4]  A. Hallén,et al.  Bistable defect in mega-electron-volt proton implanted 4H silicon carbide , 2004 .

[5]  S. Maximenko,et al.  Electron-beam-induced current observed for dislocations in diffused 4H-SiC P-N diodes , 2004 .

[6]  M. Rahman,et al.  Performance of irradiated bulk SiC detectors , 2003 .

[7]  A. Lebedev,et al.  DLTS study of defects in 6H- and 4H-SiC created by proton irradiation , 2001 .

[8]  D. Look,et al.  Characterization of deep centers in bulk n-type 4H–SiC , 2001 .

[9]  C. Zetterling,et al.  Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen , 2000 .

[10]  Tsao,et al.  Total reaction and partial cross section calculations in proton-nucleus (Zt <= 26) and nucleus-nucleus reactions (Zp and Zt <= 26). , 1993, Physical review. C, Nuclear physics.

[11]  R. Silberberg,et al.  Partial Cross-Sections in High-Energy Nuclear Reactions, and Astrophysical Applications. I. Targets With z <= 28. , 1973 .

[12]  H. Wershofen,et al.  A study of the vertical diffusion of the cosmogenic radionuclides, 7Be and 22Na in the atmosphere. , 2005, Journal of environmental radioactivity.

[13]  M. Shur,et al.  Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe , 2001 .