论文信息 - Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology

Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology

Abstract In this work an experimental assessment of the electro-thermal behaviour of AlGaN/GaN HEMT on HR-Si Microstrip Technology is given. Self-heating effects and temperature rise have been evaluated on 1 mm active device periphery when HR-Si is lapped down to 50 μm exploiting infrared thermal DC characterization method to validate thermal simulations. Maximum channel temperature and thermal resistance of the structure has been extracted at different power dissipation conditions. For the same device periphery, the Gate-to-Gate pitch influence has also been experimentally investigated and correlated to the channel temperature. Finally, relevant information about the maximum power dissipation has been pointed out, and an accurate description of the electro-thermal behaviour observed experimentally is given.

[1] C. Gaquiere,et al. GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325°C , 2010, The 5th European Microwave Integrated Circuits Conference.

[2] Wilhelm Warta,et al. Lock-in Thermography: Basics and Use for Evaluating Electronic Devices and Materials , 2003 .

[3] Andrei Vescan,et al. AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon ( 1 1 1 ) substrates , 2002 .

[4] M. Shur,et al. Self-heating in high-power AlGaN-GaN HFETs , 1998, IEEE Electron Device Letters.

[5] J. Kuzmík,et al. Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method , 2002 .

[6] U. Mishra,et al. AlGaN/GaN HEMTs-an overview of device operation and applications , 2002, Proc. IEEE.

[7] Andrei Vescan,et al. Gallium Nitride on Silicon HEMTs for Wireless Infrastructure Applications, Thermal Design and Performance , 2002 .

[8] A. Irace,et al. 50W X-band GaN MMIC HPA: Effective power capability and transient thermal analysis , 2010, The 5th European Microwave Integrated Circuits Conference.

[9] A Irace,et al. An equivalent time temperature mapping system with a 320 x 256 pixels full-frame 100 kHz sampling rate. , 2007, The Review of scientific instruments.

[10] W. Pribble,et al. Thermal analysis and its application to high power GaN HEMT amplifiers , 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.