A study of the coupling efficiency versus grating periodicity in a normal incident GaAs/AlGaAs multiquantum well infrared detector

A detailed study of the dependence of coupling quantum efficiency on the grating periodicity of planar metal grating coupled GaAs/AlGaAs quantum well infrared photodetectors has been made in this work. Five different detector samples with grating periodicities of Λ=1.1, 3.2, 5, 7, and 10 μm have been fabricated for the present study. The results showed that the device with a 5 μm grating periodicity gave the best front‐side coupling efficiency, which was in good agreement with our theoretical prediction. A single pass quantum efficiency (η) of 11% was achieved for the front‐side illumination at λp=9.8 μm and T=77 K.

[1]  Kang L. Wang,et al.  Si1−xGex/Si multiple quantum well infrared detector , 1991 .

[2]  Kwong-Kit Choi,et al.  New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices , 1987 .

[3]  B. K. Janousek,et al.  High‐detectivity GaAs quantum well infrared detectors with peak responsivity at 8.2 μm , 1990 .

[4]  Amnon Yariv,et al.  A new infrared detector using electron emission from multiple quantum wells , 1983 .

[5]  R. R. Abbott,et al.  Measurement of intersubband absorption in multiquantum well structures with monolithically integrated photodetectors , 1990 .

[6]  P. Ho,et al.  Low dark current step‐bound‐to‐miniband transition InGaAs/GaAs/AlGaAs multiquantum‐well infrared detector , 1992 .

[7]  Naresh Chand,et al.  Large photoconductive gain in quantum well infrared photodetectors , 1990 .

[8]  J. Y. Andersson,et al.  Near‐unity quantum efficiency of AlGaAs/GaAs quantum well infrared detectors using a waveguide with a doubly periodic grating coupler , 1991 .

[9]  R. A. Logan,et al.  GaAs/AlGaAs multiquantum well infrared detector arrays using etched gratings , 1989 .

[10]  Shengshi Li,et al.  A metal grating coupled bound-to-miniband transition GaAs multiquantum well/superlattice infrared detector , 1991 .

[11]  O. Byungsung,et al.  Exchange interactions in quantum well subbands , 1988 .

[12]  Roger Petit,et al.  Electromagnetic theory of gratings , 1980 .

[13]  Keith W. Goossen,et al.  Grating enhancement of quantum well detector response , 1988 .

[14]  J. Eden vuv‐pumped HgCl laser , 1978 .

[15]  C. Bethea,et al.  Broadband 8–12 μm high‐sensitivity GaAs quantum well infrared photodetector , 1989 .

[16]  Shun Lien Chuang,et al.  Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field , 1987 .

[17]  Walter L. Bloss,et al.  Effects of Hartree, exchange, and correlation energy on intersubband transitions , 1989 .

[18]  F. Julien,et al.  Novel all-optical 10 μm waveguide modulator based on intersubband absorption in GaAs/AlGaAs quantum wells , 1991 .

[19]  J. P. Harbison,et al.  Photovoltaic detection of infrared light in a GaAs/AlGaAs superlattice , 1988 .

[20]  P. Ho,et al.  Largely enhanced bound‐to‐miniband absorption in an InGaAs multiple quantum well with short‐period superlattice InAlAs/InGaAs barrier , 1991 .